BB501资料datasheet下载供应商报价日立-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
BB501	文件：71.04 Kbytes Page：13 Pages	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise; NF = 1.85 dB typ. at f = 900 MHz • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mi 文件：71.04 Kbytes 页数：13 Pages	HitachiHitachi Semiconductor 日立日立公司	Hitachi
BB501	文件：71 Kbytes Page：13 Pages	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise; NF = 1.85 dB typ. at f = 900 MHz • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mi 文件：71 Kbytes 页数：13 Pages	HitachiHitachi Semiconductor 日立日立公司	Hitachi
BB501	文件：300 bytes Page：1 Pages	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier	HITACHI 日立	HITACHI
BB501C	文件：71 Kbytes Page：13 Pages	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise; NF = 1.85 dB typ. at f = 900 MHz • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mi 文件：71 Kbytes 页数：13 Pages	HitachiHitachi Semiconductor 日立日立公司	Hitachi
BB501C	文件：198.46 Kbytes Page：10 Pages	Built in Biasing Circuit MOS FET IC UHF RF Amplifier Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise; NF = 1.85 dB typ. at f = 900 MHz • Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mi 文件：198.46 Kbytes 页数：10 Pages	RENESAS 瑞萨	RENESAS
BB501CAS-TL-E	文件：198.46 Kbytes Page：10 Pages	Built in Biasing Circuit MOS FET IC UHF RF Amplifier Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise; NF = 1.85 dB typ. at f = 900 MHz • Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mi 文件：198.46 Kbytes 页数：10 Pages	RENESAS 瑞萨	RENESAS
BB501M	文件：300.86 Kbytes Page：11 Pages	Built in Biasing Circuit MOS FET IC UHF RF Amplifier Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise; NF = 1.85 dB typ. at f = 900 MHz • Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mi 文件：300.86 Kbytes 页数：11 Pages	RENESAS 瑞萨	RENESAS
BB501M	文件：71.04 Kbytes Page：13 Pages	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise; NF = 1.85 dB typ. at f = 900 MHz • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mi 文件：71.04 Kbytes 页数：13 Pages	HitachiHitachi Semiconductor 日立日立公司	Hitachi
BB501MAS-TL-E	文件：300.86 Kbytes Page：11 Pages	Built in Biasing Circuit MOS FET IC UHF RF Amplifier Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise; NF = 1.85 dB typ. at f = 900 MHz • Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mi 文件：300.86 Kbytes 页数：11 Pages	RENESAS 瑞萨	RENESAS
BB501C	文件：300 bytes Page：1 Pages	Transistors>Amplifiers/MOSFETs	Renesas 瑞萨	Renesas

详细参数

型号：
BB501
制造商：
HITACHI
制造商全称：
Hitachi Semiconductor
功能描述：
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市弘为电子有限公司	BB501CAS-TL	HITACHI	24+	S0T343	6000	原装现货假一罚十	询价
深圳市一线半导体有限公司	BB501MZAS	RENESAS瑞萨/HITACHI日立	24+	SOT-143SOT-23-4	9000	新进库存/原装	询价
深圳市振宏微科技有限公司	BB501MAS	SOT-143	23+	NA	15659	振宏微专业只做正品,假一罚百!	询价
深圳市华斯顿科技有限公司	BB501MAS-TL	Hitachi	25+23+	Sot-143	32742	绝对原装正品全新进口深圳现货	询价
深圳诚思涵科技有限公司	BB501MAS-TL	HITACH	04+	SOT143	200000		询价
中天科工半导体（深圳）有限公司	BB501MAS-TL	HITACH	20+	SOT143	36800	原装优势主营型号-可开原型号增税票	询价
深圳市拓亿芯电子有限公司	BB501MAS-TL	HITACHI	25+	SOT143	30000	代理全新原装现货,价格优势	询价
深圳市莱克讯科技有限公司	BB501MAS-TL	HITACHI	1922+	SOT-143	35689	原装进口现货库存专业工厂研究所配单供货	询价
深圳市威尔健半导体有限公司	BB501MEW-TL	RENESAS/瑞萨	23+	SOT-143	50000	全新原装正品现货,支持订货	询价
深圳市英瑞尔电子科技有限公司	BB501MAS-TL	HITACH	24+	SOT143	48000	原装现货假一赔十	询价

更多BB501供应商更新时间2025-12-25 13:30:00

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