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CMPD2003

SURFACEMOUNTHIGHVOLTAGESILICONSWITCHINGDIODE

DESCRIPTION: TheCENTRALSEMICONDUCTORCMPD2003,CMPD2003A,CMPD2003C,CMPD2003S,CMPD2004,CMPD2004A,CMPD2004CandCMPD2004Stypesaresiliconswitchingdiodesmanufacturedbytheepitaxialplanarprocess,designedforapplicationsrequiringhighvoltagecapability.

CentralCentral Semiconductor Corp

美国中央半导体

CMPD2003A

HIGHVOLTAGESILICONSWITCHINGDIODE

CentralCentral Semiconductor Corp

美国中央半导体

CMPD2003A

SURFACEMOUNTHIGHVOLTAGESILICONSWITCHINGDIODE

CentralCentral Semiconductor Corp

美国中央半导体

CMPD2003C

SURFACEMOUNTHIGHVOLTAGESWITCHINGDIODE

DESCRIPTION TheCENTRALSEMICONDUCTORCMPD2003,CMPD2003C,CMPD2003S,CMPD2004,CMPD2004C,andCMPD2004Stypesaresiliconswitchingdiodesmanufacturedbytheepitaxialplanarprocess,designedforapplicationsrequiringhighvoltagecapability.

CentralCentral Semiconductor Corp

美国中央半导体

CMPD2003C

SURFACEMOUNTHIGHVOLTAGESILICONSWITCHINGDIODE

DESCRIPTION: TheCENTRALSEMICONDUCTORCMPD2003,CMPD2003A,CMPD2003C,CMPD2003S,CMPD2004,CMPD2004A,CMPD2004CandCMPD2004Stypesaresiliconswitchingdiodesmanufacturedbytheepitaxialplanarprocess,designedforapplicationsrequiringhighvoltagecapability.

CentralCentral Semiconductor Corp

美国中央半导体

CMPD2003C

SURFACEMOUNTHIGHVOLTAGESILICONSWITCHINGDIODE

CentralCentral Semiconductor Corp

美国中央半导体

CMPD2003C

HIGHVOLTAGESILICONSWITCHINGDIODE

CentralCentral Semiconductor Corp

美国中央半导体

CMPD2003S

HIGHVOLTAGESILICONSWITCHINGDIODE

CentralCentral Semiconductor Corp

美国中央半导体

CMPD2003S

SURFACEMOUNTHIGHVOLTAGESILICONSWITCHINGDIODE

CentralCentral Semiconductor Corp

美国中央半导体

CMPD2003S

SURFACEMOUNTHIGHVOLTAGESILICONSWITCHINGDIODE

DESCRIPTION: TheCENTRALSEMICONDUCTORCMPD2003,CMPD2003A,CMPD2003C,CMPD2003S,CMPD2004,CMPD2004A,CMPD2004CandCMPD2004Stypesaresiliconswitchingdiodesmanufacturedbytheepitaxialplanarprocess,designedforapplicationsrequiringhighvoltagecapability.

CentralCentral Semiconductor Corp

美国中央半导体

CMPD2003S

SURFACEMOUNTHIGHVOLTAGESWITCHINGDIODE

DESCRIPTION TheCENTRALSEMICONDUCTORCMPD2003,CMPD2003C,CMPD2003S,CMPD2004,CMPD2004C,andCMPD2004Stypesaresiliconswitchingdiodesmanufacturedbytheepitaxialplanarprocess,designedforapplicationsrequiringhighvoltagecapability.

CentralCentral Semiconductor Corp

美国中央半导体

CMY2003

MylarSpeaker

CANOPUSCanopus Electronics (H.K.) Ltd.

Canopus Electronics (H.K.) Ltd.

CNB2003

Reflectivephotosensor

PanasonicPanasonic Corporation

松下松下电器

CSSD2003

Siliconswitchingdiode

DESCRIPTION: TheCENTRALSEMICONDUCTORCSSD2003isahighspeedSiliconSwitchingDiodedesignedforcomputerandgeneralpurposeapplicationsrequiringahighbreakdownvoltage.

CentralCentral Semiconductor Corp

美国中央半导体

CXP2003M

C-MOSSERIALTOPARALLELCONVERTER

ETC1List of Unclassifed Manufacturers

未分类制造商

D2003

METALGATERFSILICONFET

GOLDMETALLISEDMULTI-PURPOSESILICONDMOSRFFET5W–28V–1GHzPUSH–PULL FEATURES •SIMPLIFIEDAMPLIFIERDESIGN •SUITABLEFORBROADBANDAPPLICATIONS •VERYLOWCrss •SIMPLEBIASCIRCUITS •LOWNOISE •HIGHGAIN–13dBMINIMUM APPLICATIONS •VHF/UHFCOMMUNICATIONSfrom50MHzto1G

SEME-LAB

Seme LAB

D2003UK

METALGATERFSILICONFET

GOLDMETALLISEDMULTI-PURPOSESILICONDMOSRFFET5W–28V–1GHzPUSH–PULL FEATURES •SIMPLIFIEDAMPLIFIERDESIGN •SUITABLEFORBROADBANDAPPLICATIONS •VERYLOWCrss •SIMPLEBIASCIRCUITS •LOWNOISE •HIGHGAIN–13dBMINIMUM APPLICATIONS •VHF/UHFCOMMUNICATIONSfrom50MHzto1G

SEME-LAB

Seme LAB

DG2003

Low-VoltageDualSPSTAnalogSwitch

DESCRIPTION TheDG2003/2004/2005aredualsingle-pole/single-throwmonolithicCMOSanalogswitchdesignedforhighperformanceswitchingofanalogsignals.Combininglowpower,fastswitching,lowon-resistance(rDS(on):1.2Ω)andsmallphysicalsize(MSOP-8),theDG2003/2004/2005areidealfor

VishayVishay Siliconix

威世科技

DG2003

Low-VoltageDualSPSTAnalogSwitch

features LowVoltageOperation(1.8Vto5.5V) LowOn-Resistance-rDS(on):1.2 FastSwitching-14ns LowChargeInjection-QINJ:1pC LowPowerConsumption TTL/CMOSCompatible MSOP-8Package benefits ReducedPowerConsumption SimpleLogicInterface HighAccur

VishayVishay Siliconix

威世科技

DG2003DQ

Low-VoltageDualSPSTAnalogSwitch

features LowVoltageOperation(1.8Vto5.5V) LowOn-Resistance-rDS(on):1.2 FastSwitching-14ns LowChargeInjection-QINJ:1pC LowPowerConsumption TTL/CMOSCompatible MSOP-8Package benefits ReducedPowerConsumption SimpleLogicInterface HighAccur

VishayVishay Siliconix

威世科技

产品属性

  • 产品编号:

    B2003

  • 制造商:

    TE Connectivity Laird

  • 类别:

    RF/IF,射频/中频和 RFID > RF 天线

  • 包装:

    散装

  • 频率组:

    VHF(f < 300MHz)

  • 频率(中心/带):

    212MHz

  • 频率范围:

    200MHz ~ 225MHz

  • 天线类型:

    鞭状,直形

  • VSWR:

    2

  • 增益:

    3dB

  • 端接:

    NMO

  • 安装类型:

    基座

  • 高度(最大值):

    35.000"(889.00mm)

  • 描述:

    RF ANT 212MHZ WHIP STR NMO 33\

供应商型号品牌批号封装库存备注价格
LAIRD
20+
射频元件
155
就找我吧!--邀您体验愉快问购元件!
询价
JXD
2016+
DIP20
8850
只做原装,假一罚十,公司专营变压器,滤波器!
询价
JXD
1736+
DIP20
15238
原厂优势渠道
询价
JXD
2022+
DIP20
90000
原厂原盒现货,年底清仓大特价!送
询价
MICROPOWER
2022+
51800
全新原装 货期两周
询价
JXD
2021+
DIP20
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
MPD
2022+
DIP
39766
全新原装正品
询价
MPD
2021+
DIP
11000
十年专营原装现货,假一赔十
询价
JXD
22+
DIP20PIN
8000
原装正品支持实单
询价
MPD
24+25+/26+27+
车规-电源模块
3280
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
更多B2003供应商 更新时间2021-9-14 10:50:00