丝印：B12；Package：SOT-23；NPN General Purpose Amplifier

文件：731.89 Kbytes 页数：4 Pages

LUGUANG

鲁光电子

丝印：B1202；Package：TL；Bipolar Transistor (-)50V, (-)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA

Bipolar Transistor (–)50V, (–)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance and wide ASO • Low collector to emitter saturation voltage • Fast switching speed • Small and slim package making it easy to make 2SB1202/2SD1

文件：100.82 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：B1237；Package：ATV；Medium Power Transistor

Medium Power Transistor (-32V, -1A) Features 1) Low VCE(sat). VCE(sat)= -0.2V(Typ.) (IC / IB = -500mA / -50mA) 2) Compliments 2SD1664 / 2SD1858 Structure Epitaxial planar type PNP silicon transistor

文件：128.6 Kbytes 页数：4 Pages

ROHM

罗姆

丝印：B1274；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors

FEATURES Wide ASO (Adoption of MBIT Process). Low Saturation Voltage. High Reliability. High Breakdown Voltage.

文件：1.3319 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：B123；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Product Summary ● VDS 100V ● ID 200mA ● RDS(ON)( at VGS=10V)

文件：594.71 Kbytes 页数：6 Pages

YANGJIE

扬杰电子

丝印：B123；Package：SOT-23；N-Channel 100-V(D-S) MOSFET

FEATURE: ● Rugged and Relaible ● High density cell design for extremely low RDS(on) ● Surface Mount Package ● Voltage Controlled Small Signal Switch VDS(V)=100V ID = 0.17A (VGS =10V) RDS(ON)

文件：493.66 Kbytes 页数：3 Pages

UMW

友台半导体

丝印：B123；Package：SOT-23；N Channel MOSFET

FEATURE Surface Mount Package High Density Cell Design for Extremely Low RDS(ON) Voltage Controlled Small Signal Switch Rugged and Reliable

文件：937.51 Kbytes 页数：5 Pages

SY

顺烨电子

丝印：B123KX；Package：SOT-23；NCE N-Channel Enhancement Mode Power MOSFET

General Features ● VDS = 100 V,ID = 0.17A RDS(ON)

文件：237.94 Kbytes 页数：6 Pages

NCEPOWER

新洁能

丝印：B127；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description This new generation uses advanced planar technology MOSFET, provide excellent high voltage and fast switching, making it ideal for small-signal and level shift applications. Features Low Input Capacitance High BVDSS Rating for Power Application Low Input/Output Leakage Appl

文件：242.32 Kbytes 页数：6 Pages

RECTRON

丽正国际

丝印：B12C；Package：SOT-23；Transient Voltage Suppressors for ESD Protection

Feature 140~298 Watts Peak Pulse Power per Line (tp=8/20μs) Protects two I/O lines Low clamping voltage Working voltages: 3.3V ~ 36V Low leakage current IEC61000-4-2 (ESD) ±30kV (air), ±30kV (contact) 3.3V~15V IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact) 24V~36V IEC61000-4-4 (EFT) 40A (5

文件：2.88396 Mbytes 页数：4 Pages

UNSEMI

优恩半导体