首页 >AT-310(40)>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
AT-310(40) | 包装:散装 封装/外壳:SMA 单排模块 类别:RF/IF,射频/中频和 RFID 衰减器 描述:RF ATTENUATOR 10DB 50OHM SMA | Hirose Electric Co Ltd Hirose Electric Co Ltd | Hirose Electric Co Ltd | |
T3/DS3/E3/STS-1TRANSFORMERSEXTENDEDTEMPERATURERANGE | MPSINDMPS Industries, Inc. 美国芯源 | MPSIND | ||
8-bitMicrocontrollers | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | Atmel | ||
ATXIndustrialMotherboardwith8th/9thGenerationIntel®Core™Processor,DDR4DRAM,Option:4GLTEFunction Features ■8th/9thGenerationIntel®Core™LGA1151Processor ■SupportsMax.TDP6Core95W ■DDR42666/2400/2133MHz,max.64GB ■TwoIndependentDisplays:HDMIx1,VGAx1,DPx1 ■DualIntel®GigabitEthernet,i210ATx1,i219Vx1 ■USB3.2Gen1portsx4,USB2.0portsx5 ■M.22280 | AAEONAAEON Technology 研扬科技研扬科技(苏州)有限公司 | AAEON | ||
SchottkyBarrierDiode | ZOWIEZowie Technology Corporation 智威智威科技股份有限公司 | ZOWIE | ||
Heavydutyswitches&pilotlightsofferbothvarietyandreliabilityEnduresharshenvironments | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
HIGHCURRENTPHASECONTROL | POSEICO Power Semiconductors | POSEICO | ||
NPN14GHzwidebandtransistor Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN14GHzwidebandtransistor Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN14GHzwidebandtransistor Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features Highpowergain Lownoisefigure Hightransitionfrequency Goldmetallizationensuresexcellentreliability Applications IntendedforRadioFrequency(RF)fro | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
NPN14GHzwidebandtransistor Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN14GHzwidebandtransistor Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features Highpowergain Lownoisefigure Hightransitionfrequency Goldmetallizationensuresexcellentreliability Applications IntendedforRadioFrequency(RF)fro | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
NPN14GHzwidebandtransistor Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN14GHzwidebandtransistor Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
N-channelsiliconfield-effecttransistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
SiliconBipolarMMIC-Amplifier(Cascadable50W-gainblock9dBtypicalgainat1.0GHz9dBmtypicalP-1dBat1.0GHz3dB-bandwidth:DCto2.4GHz) SiliconBipolarMMIC-Amplifier Preliminarydata •Cascadable50Ω-gainblock •9dBtypicalgainat1.0GHz •9dBmtypicalP-1dBat1.0GHz •3dB-bandwidth:DCto2.4GHz | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | SIEMENS | ||
BPS310Series-12mmUncompensatedLowPressureSensor | BournsBourns Electronic Solutions 伯恩斯伯恩斯(邦士) | Bourns | ||
SINGLE-PHASESILICONBRIDGERECTIFIER | RECTRON Rectron Semiconductor | RECTRON |
产品属性
- 产品编号:
AT-310(40)
- 制造商:
Hirose Electric Co Ltd
- 类别:
RF/IF,射频/中频和 RFID > 衰减器
- 包装:
散装
- 衰减值:
10dB
- 功率 (W):
1W
- 封装/外壳:
SMA 单排模块
- 描述:
RF ATTENUATOR 10DB 50OHM SMA
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Hirose |
20+ |
SMA |
960 |
无线通信IC,大量现货! |
询价 | ||
Hirose |
2020+ |
N/A |
8 |
加我qq或微信,了解更多详细信息,体验一站式购物 |
询价 | ||
HIROSE |
20+ |
射频元件 |
55 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
Hirose |
22+ |
NA |
8 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
HRS/广濑 |
2420+ |
/ |
484522 |
一级代理,原装正品! |
询价 | ||
AVAGO |
13+ |
SOT23 |
1500 |
特价热销现货库存 |
询价 | ||
惠普 |
17+ |
SOT-143 |
6200 |
100%原装正品现货 |
询价 | ||
HP |
16+ |
SOT-143 |
10000 |
进口原装现货/价格优势! |
询价 | ||
HP |
2008 |
SOT-143 |
3804 |
询价 | |||
AGILENT |
22+ |
SOT143 |
8200 |
全新原装现货!自家库存! |
询价 |
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