N-Channel MOSFET Transistor

DESCRIPTION · Drain Current -ID= 32A@ TC=25℃ · Drain Source Voltage -VDSS= 1200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 100mΩ(Max)@VGS= 20V APPLICATIONS · DC-DC converter · Battery Chargers · High speed power switch

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ISC

无锡固电

SiC MOSFET

ROHS

Microchip

微芯科技

Power Schottky rectifier

Description This Schottky diode is suited for high frequency switch mode power supply. Packaged in TO-220AB, TO-220AB narrow leads and I2PAK, this device is intended to be used in notebook, game station and desktop adapters, providing in these applications a good efficiency at both low and high

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STMICROELECTRONICS

意法半导体

Silicon Carbide N-Channel Power MOSFET

DESCRIPTION Silicon carbide (SiC) power MOSFET product line from Microsemi increase your performance over silicon MOSFET and silicon IGBT solutions while lowering your total cost of ownership for high-voltage applications. FEATURES / TYPICAL APPLICATIONS SiC MOSFET Features: • Low capacita

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Microsemi

美高森美