BL-C4435

LEDGaAsP/GaPHi-EffRedLowpowerconsumption.

BL-C4435

STANDARDLEDLAMPS

BL-C4435

STANDARDLEDLAMPS(CYLINDRICALTYPES)

BLM4435

P-ChannelEnhancementModePowerMOSFET

CEM4435

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-8A,RDS(ON)=20mΩ@VGS=-10V. RDS(ON)=35mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage.

CEM4435A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-8A,RDS(ON)=20mΩ@VGS=-10V. RDS(ON)=33mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage. ■Leadfreeproductisacquired.

CEM4435A

P-ChannelMOSFETusesadvancedtrenchtechnology

CEM4435A

P-Channel30-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgTested APPLICATIONS •LoadSwitch •BatterySwitch

CEM4435A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-8A,RDS(ON)=20mW@VGS=-10V. RDS(ON)=33mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Lead-freeplating;RoHScompliant.

CEM4435A

P-channelEnhancementModePowerMOSFET

Features VDS=-30V,ID=-9A RDS(ON)