LED GaAsP/GaP Hi-Eff Red Low power consumption.

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P-Channel Enhancement Mode Power MOSFET

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Belling

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P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -8A, RDS(ON) = 20mΩ @VGS = -10V. RDS(ON) = 35mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package.

文件：500.86 Kbytes 页数：5 Pages

CET

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P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -8A, RDS(ON) = 20mΩ @VGS = -10V. RDS(ON) = 33mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package. ■ Lead free product is acquired.

文件：106.95 Kbytes 页数：4 Pages

CET

华瑞