P-Channel Enhancement Mode MOSFET

Features • -20V/-3A, RDS(ON)=75mΩ(typ.) @ VGS=-4.5V RDS(ON)=100mΩ(typ.) @ VGS=-2.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applications • Switching Regulators • Switching Converters

文件：115.74 Kbytes 页数：10 Pages

ANPEC

茂达电子

P-Channel Enhancement Mode MOSFET

Features • -20V/-3A, RDS(ON)=75mΩ(typ.) @ VGS=-4.5V RDS(ON)=100mΩ(typ.) @ VGS=-2.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applications • Switching Regulators • Switching Converters

文件：115.74 Kbytes 页数：10 Pages

ANPEC

茂达电子

P-Channel Enhancement Mode MOSFET

Features • -20V/-3.6A , RDS(ON)=70mΩ(typ.) @ VGS=-4.5V RDS(ON)=100mΩ(typ.) @ VGS=-2.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • TO-252 Package Applications • Power Management in Notebook Computer , Portable Equipment and Battery

文件：201.92 Kbytes 页数：9 Pages

ANPEC

茂达电子

P-Channel Enhancement Mode MOSFET

Features • -20V/-3.6A , RDS(ON)=70mΩ(typ.) @ VGS=-4.5V RDS(ON)=100mΩ(typ.) @ VGS=-2.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • TO-252 Package Applications • Power Management in Notebook Computer , Portable Equipment and Battery

文件：201.92 Kbytes 页数：9 Pages

ANPEC

茂达电子

P-Channel Enhancement Mode MOSFET

Features • -20V/-3.6A , RDS(ON)=70mΩ(typ.) @ VGS=-4.5V RDS(ON)=100mΩ(typ.) @ VGS=-2.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • TO-252 Package Applications • Power Management in Notebook Computer , Portable Equipment and Battery

文件：201.92 Kbytes 页数：9 Pages

ANPEC

茂达电子