P-Channel Enhancement Mode MOSFET

Features • -20V/-3.6A , RDS(ON)=70mΩ(typ.) @ VGS=-4.5V RDS(ON)=100mΩ(typ.) @ VGS=-2.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • TO-252 Package Applications • Power Management in Notebook Computer , Portable Equipment and Battery

文件：201.92 Kbytes 页数：9 Pages

ANPEC

茂达电子

36-40GHz Low Noise Very High Gain Amplifier

Description The CHA2095a is a four-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and elec

文件：106 Kbytes 页数：7 Pages

UMS

36-40GHz Low Noise Very High Gain Amplifier

文件：110.85 Kbytes 页数：6 Pages

UMS

7.5-30GHz Frequency Multiplier

Description The CHX2095 is a frequency multiplier by 4 monolithic circuit. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process. Main Features ■ Broadb

文件：146.83 Kbytes 页数：6 Pages

UMS