P-Channel Enhancement Mode MOSFET

 Features • -20V/-0.65A , RDS(ON)=370mΩ(typ.) @ VGS=-4.5V RDS(ON)=550mΩ(typ.) @ VGS=-2.5V •Super High Dense Cell Design •Reliable and Rugged •SC-70 Package •Lead Free Available (RoHS Compliant)

文件：112.94 Kbytes 页数：10 Pages

ANPEC

茂达电子

P-Channel Enhancement Mode MOSFET

 Features • -20V/-0.65A , RDS(ON)=370mΩ(typ.) @ VGS=-4.5V RDS(ON)=550mΩ(typ.) @ VGS=-2.5V •Super High Dense Cell Design •Reliable and Rugged •SC-70 Package •Lead Free Available (RoHS Compliant)

文件：112.94 Kbytes 页数：10 Pages

ANPEC

茂达电子

P-Channel Enhancement Mode MOSFET

\b •  -20V/-0.65A ,\n   RDS(ON)=370mΩ(typ.) @ VGS=-4.5V\n  RDS(ON)=550mΩ(typ.) @ VGS=-2.5V\n•Super High Dense Cell Design\n•Reliable and Rugged\n•SC-70 Package\n•Lead Free Available (RoHS Compliant);

Anpec

茂达电子

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DESCRIPTION: The ASI MV1401 is a Silicon HyperAbrupt Tuning Varactor Diode. FEATURES INCLUDE: • 14:1 Minimum Tuning Range • High Q - 400 Typical • Economical DO-7 Package

文件：17.43 Kbytes 页数：1 Pages

ASI

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Uses highly reliable LED elements Lineup of lighting colors, protective resistors, etc.

文件：149.64 Kbytes 页数：1 Pages

OKAYA