N-Channel Enhancement Mode MOSFET

Features • 20V/30A , RDS(ON)=6mΩ(typ.) @ VGS=10V RDS(ON)=8mΩ(typ.) @ VGS=4.5V RDS(ON)=16mΩ(typ.) @ VGS=2.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • TO-252 Package Applications • Power Management in Computer, Por

文件：146.09 Kbytes 页数：9 Pages

ANPEC

茂达电子

N-Channel Enhancement Mode MOSFET

Features • 20V/30A , RDS(ON)=6mΩ(typ.) @ VGS=10V RDS(ON)=8mΩ(typ.) @ VGS=4.5V RDS(ON)=16mΩ(typ.) @ VGS=2.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • TO-252 Package Applications • Power Management in Computer, Por

文件：146.09 Kbytes 页数：9 Pages

ANPEC

茂达电子

20 V, N-channel enhancement mode MOSFET

Anpec

茂达电子

B2000ERU SERIES

文件：281.94 Kbytes 页数：2 Pages

MPD

4:1 Input Range, 20W Single & Dual Output DC/DC Con vert ers

文件：275.77 Kbytes 页数：4 Pages

MPD

B2000RU SERIES

文件：276.35 Kbytes 页数：4 Pages

MPD