P-Channel Enhancement Mode MOSFET

Features • -20V/-2.8A , RDS(ON)=72mΩ(typ.) @ VGS=-10V RDS(ON)=100mΩ(typ.) @ VGS=-4.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SOT-23 Package Applications • Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems.

文件：160.7 Kbytes 页数：9 Pages

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P-Channel Enhancement Mode MOSFET

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丝印：M01*；Package：SOT-23；P-Channel Enhancement Mode MOSFET

Features • -20V/-2.8A , RDS(ON)=72mΩ(typ.) @ VGS=-10V RDS(ON)=100mΩ(typ.) @ VGS=-4.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SOT-23 Package Applications • Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems.

文件：160.7 Kbytes 页数：9 Pages

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P-Channel Enhancement Mode MOSFET

Features • -20V/-3A, RDS(ON)=72mΩ(typ.) @ VGS=-4.5V RDS(ON)=98mΩ(typ.) @ VGS=-2.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powe

文件：112.78 Kbytes 页数：10 Pages

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P-Channel Enhancement Mode MOSFET

Features • -20V/-3A, RDS(ON)=72mΩ(typ.) @ VGS=-4.5V RDS(ON)=98mΩ(typ.) @ VGS=-2.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powe

文件：112.78 Kbytes 页数：10 Pages

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P-Channel Enhancement Mode MOSFET

Features • -20V/-3A, RDS(ON)=72mΩ(typ.) @ VGS=-4.5V RDS(ON)=98mΩ(typ.) @ VGS=-2.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powe

文件：112.78 Kbytes 页数：10 Pages

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P-Channel Enhancement Mode MOSFET

Features • -20V/-3A, RDS(ON)=72mΩ(typ.) @ VGS=-4.5V RDS(ON)=98mΩ(typ.) @ VGS=-2.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powe

文件：112.78 Kbytes 页数：10 Pages

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P-Channel Enhancement Mode MOSFET

Features • -20V/-3A, RDS(ON)=72mΩ(typ.) @ VGS=-4.5V RDS(ON)=98mΩ(typ.) @ VGS=-2.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powe

文件：112.78 Kbytes 页数：10 Pages

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茂达电子

P-Channel Enhancement Mode MOSFET

Features • -20V/-2.8A , RDS(ON)=72mΩ(typ.) @ VGS=-10V RDS(ON)=100mΩ(typ.) @ VGS=-4.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SOT-23 Package Applications • Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems.

文件：160.7 Kbytes 页数：9 Pages

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P-Channel Enhancement Mode MOSFET

Features · -20V/-2.8A RDS(ON)= 56mW (typ.) @ VGS= -4.5V RDS(ON)= 85mW (typ.) @ VGS= -2.5V RDS(ON)= 106mW (typ.) @ VGS= -1.8V · Super High Dense Cell Design · Reliable and Rugged Applications · Power Management in Notebook Computer, Portable Equipment and Battery

文件：179.33 Kbytes 页数：10 Pages

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