N-Channel Enhancement Mode MOSFET

Features · 20V/10A , RDS(ON)=55mW (typ.) @ VGS=10V RDS(ON)=75mW (typ.) @ VGS=4.5V RDS(ON)=140mW (typ.) @ VGS=2.5V · Super High Dense Cell Design · Reliable and Rugged · Lead Free Available (RoHS Compliant) Applications · Power Management in

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ANPEC

茂达电子

N-Channel Enhancement Mode MOSFET

Features · 20V/10A , RDS(ON)=55mW (typ.) @ VGS=10V RDS(ON)=75mW (typ.) @ VGS=4.5V RDS(ON)=140mW (typ.) @ VGS=2.5V · Super High Dense Cell Design · Reliable and Rugged · Lead Free Available (RoHS Compliant) Applications · Power Management in

文件：187.09 Kbytes 页数：10 Pages

ANPEC

茂达电子

N-Channel Enhancement Mode MOSFET

Features • 20V/12A, RDS(ON)=55mΩ(typ.) @ VGS=10V RDS(ON)=75mΩ(typ.) @ VGS=4.5V RDS(ON)=140mΩ(typ.) @ VGS=2.5V • Super High Dense Cell Design • High Power and Current Handling Capability • TO-252 and SOT-223 Packages Applications • Switching R

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ANPEC

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UHF Satellite Communication (SATCOM) Antenna

文件：76.95 Kbytes 页数：1 Pages

Ultralife

Intensi-fi Gigabit Ethernet Draft-802.11n Processor

FEATURES • Advanced 500 DMIPS/300-MHz MIPS32® core • 4-way set associative 32-KB I-Cache • 2-way set associative 32-KB D-Cache • 4-KB Read-Ahead Cache • MMU/TLB support for Linux® • Advanced Gigabit Ethernet MAC • Hardware TCP segmentation and Checksum offload • GMII, RGMII

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BOARDCOM

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