N-Channel Enhancement Mode MOSFET

Features • 20V/6A , RDS(ON)=35mΩ(typ.) @ VGS=4.5V RDS(ON)=38mΩ(typ.) @ VGS=2.5V •Super High Dense Cell Design for Extremely Low RDS(ON) •Reliable and Rugged •TO-252 Package

文件：140.03 Kbytes 页数：9 Pages

ANPEC

茂达电子

N-Channel Enhancement Mode MOSFET

Features • 20V/6A , RDS(ON)=35mΩ(typ.) @ VGS=4.5V RDS(ON)=38mΩ(typ.) @ VGS=2.5V •Super High Dense Cell Design for Extremely Low RDS(ON) •Reliable and Rugged •TO-252 Package

文件：140.03 Kbytes 页数：9 Pages

ANPEC

茂达电子

N-Channel Enhancement Mode MOSFET

• 20V/6A ,RDS(ON)=28mΩ(typ.) @ VGS=4.5V RDS(ON)=38mΩ(typ.) @ VGS=2.5V •Super High Dense Cell Design •Reliable and Rugged •Lead Free Available (RoHS Compliant)

文件：131.67 Kbytes 页数：11 Pages

ANPEC

茂达电子

N-Channel Enhancement Mode MOSFET

• 20V/6A ,RDS(ON)=28mΩ(typ.) @ VGS=4.5V RDS(ON)=38mΩ(typ.) @ VGS=2.5V •Super High Dense Cell Design •Reliable and Rugged •Lead Free Available (RoHS Compliant)

文件：131.67 Kbytes 页数：11 Pages

ANPEC

茂达电子

N-Channel Enhancement Mode MOSFET

• 20V/6A ,RDS(ON)=28mΩ(typ.) @ VGS=4.5V RDS(ON)=38mΩ(typ.) @ VGS=2.5V •Super High Dense Cell Design •Reliable and Rugged •Lead Free Available (RoHS Compliant)

文件：131.67 Kbytes 页数：11 Pages

ANPEC

茂达电子