丝印：AP3N30D；Package：TO-252-3L；300V N-Channel Enhancement Mode MOSFET

Features - VDS = 300V ID =3A - RDS(ON)

文件：1.2476 Mbytes 页数：7 Pages

APME

永源微电子

300V N-Channel Enhancement Mode MOSFET

APM

永源微

300V N-Channel MOSFET

300V N-Channel MOSFET

文件：740.48 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 1.1 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ APPLICATION ORIENTED CHARACTERIZATION ■ THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) ■ SURFACE-MOUNTING D

文件：143.53 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 1.15 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ APPLICATION ORIENTED CHARACTERIZATION ■ THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) ■ SURFACE-MOUNTING

文件：170.51 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体