丝印：AP3N90T；Package：TO-263-3L；900V N-Channel Enhancement Mode MOSFET

Features - VDS = 900V ID =3.0A - RDS(ON)

文件：1.52744 Mbytes 页数：7 Pages

APME

永源微电子

900V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：697.22 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

900V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：688.14 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

900V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：675.74 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体