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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
MDP11N60TH	文件：1.04564 Mbytes Page：6 Pages	N-ChannelMOSFET600V,11A,0.55(ohm)	MGCHIP MagnaChip Semiconductor.	MGCHIP
MDP11N60TH	文件：332.35 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.55Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
MGP11N60E	文件：123.51 Kbytes Page：6 Pages	InsulatedGateBipolarTransistor InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplications	MotorolaMotorola, Inc 摩托罗拉	Motorola
MGP11N60E	文件：120.21 Kbytes Page：5 Pages	SHORTCIRCUITRATEDLOWON-VOLTAGE InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplications	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
MGP11N60ED	文件：145.87 Kbytes Page：6 Pages	SHORTCIRCUITRATEDLOWON-VOLTAGE InsulatedGateBipolarTransistorwithAnti-ParallelDiode N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–block	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
OM11N60	文件：33.32 Kbytes Page：4 Pages	POWERMOSFETINHERMETICISOLATED [Omnirel] DESCRIPTION ThisseriesofhermeticallypackagedproductsfeaturethelatestadvancedMOSFETandpackagingtechnology.Thedevicebreakdownratingsprovideasubstantialvoltagemarginforstringentapplicationssuchas270VDCaircraftpowerand/orrectified230VACpower(lineoperat	etc2List of Unclassifed Manufacturers etc2未分类制造商	etc2
OM11N60SA	文件：33.32 Kbytes Page：4 Pages	POWERMOSFETINHERMETICISOLATED [Omnirel] DESCRIPTION ThisseriesofhermeticallypackagedproductsfeaturethelatestadvancedMOSFETandpackagingtechnology.Thedevicebreakdownratingsprovideasubstantialvoltagemarginforstringentapplicationssuchas270VDCaircraftpowerand/orrectified230VACpower(lineoperat	etc2List of Unclassifed Manufacturers etc2未分类制造商	etc2
OM11N60SA	文件：35.79 Kbytes Page：4 Pages	POWERMOSFETINHERMETICISOLATED DESCRIPTION ThisseriesofhermeticallypackagedproductsfeaturethelatestadvancedMOSFETandpackagingtechnology.Thedevicebreakdownratingsprovideasubstantialvoltagemarginforstringentapplicationssuchas270VDCaircraftpowerand/orrectified230VACpower(lineoperation).They	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
PCFC11N60W	文件：298.83 Kbytes Page：14 Pages	DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
PSM11N60CT	文件：1.0463 Mbytes Page：9 Pages	11A600VSingleN-ChannelPowerMOSFET	PFCPFC Device Inc. PFC	PFC
PSM11N60CTF	文件：1.045589 Mbytes Page：9 Pages	11A600VSingleN-ChannelPowerMOSFET	PFCPFC Device Inc. PFC	PFC
SIHH11N60E	文件：197.47 Kbytes Page：9 Pages	ESeriesPowerMOSFET FEATURES •Fullylead(Pb)-freedevice •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) •Kelvinconnectionforreducedgatenoise •Materialcategorization:fordefinit	VishayVishay Siliconix 威世科技	Vishay
SIHH11N60E	文件：196.81 Kbytes Page：9 Pages	Reducedswitchingandconductionlosses	VishayVishay Siliconix 威世科技	Vishay
SIHH11N60EF	文件：212.7 Kbytes Page：9 Pages	EFSeriesPowerMOSFETwithFastBodyDiode	VishayVishay Siliconix 威世科技	Vishay
SPA11N60CFD	文件：260.899 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor •FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •Reducedswitchingandconductionlosses •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplica	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
SPA11N60CFD	文件：262.52 Kbytes Page：12 Pages	CoolMOSPowerTransistor Features •Newrevolutionaryhighvoltagetechnology •Intrinsicfast-recoverybodydiode •Extremelylowreverserecoverycharge •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •Periodicavalancherated •QualifiedaccordingtoJEDEC0)fortargetapplication	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPA11N60CFD	文件：560.84 Kbytes Page：12 Pages	CoolMOSPowerTransistor	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPA11N60CFD	文件：210.02 Kbytes Page：12 Pages	CoolMOSTMPowerTransistorFeaturesNewrevolutionaryhighvoltagetechnology	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPI11N60CFD	文件：1.56068 Mbytes Page：12 Pages	NewrevolutionaryhighvoltagetechnologyUltralowgatechargePeriodicavalancherated	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPI11N60CFD	文件：331.19 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC

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供应商	型号	品牌	批号	封装	库存	备注	价格
中天科工半导体（深圳）有限公司	AOW11N60	Alpha & Omega Semiconductor In	23+	TO-262	30000	晶体管-分立半导体产品-原装正品	询价
深圳市泓利达微科技有限公司	AOW11N60	AOS/万代	24+	TO-262	333888	#NAME?	询价
深圳市科恒伟业电子有限公司	AOW11N60	AOS	2016+	TO-262	6528	房间原装进口现货假一赔十	询价
深圳市鹏和科技有限公司	AOW11N60	AOS	24+	TO-262	5000	只做原装公司现货	询价
深圳市瑞新盛科技有限公司	AOW11N60	AOS		TO-262	20000	原装正品	询价
深圳市百视威讯电子科技有限公司	AOW11N60		23+	N/A	35700	正品授权货源可靠	询价
深圳市百诺芯科技有限公司	AOW11N60	AOS/万代	23+	TO-262	24190	原装正品代理渠道价格优势	询价
深圳市百域芯科技有限公司	AOW11N60	AOS/万代	21+	TO-262	30000	优势供应实单必成可13点增值税	询价
深圳市科雨电子有限公司	AOW11N60	AOS	1809+	TO-262	3675	就找我吧!--邀您体验愉快问购元件!	询价
深圳市汇莱威科技有限公司	AOW11N60	AOS/万代		TO-262	198589	假一罚十原包原标签常备现货!	询价

更多AOW11N60供应商更新时间2024-5-9 14:14:00

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