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AOTF15S60L

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

AOB15S60

iscN-ChannelMOSFETTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=15A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.78Ω(Max) •100avalanchetested •MinimumLot-to-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

AOB15S60

600V15AaMOSpowerTransistor

GeneralDescription TheAOT15S60&AOB15S60&AOTF15S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOSMD

AOB15S60

600V15AaMOSPowerTransistor

GeneralDescription TheAOT15S60&AOB15S60&AOTF15S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOSMD

AOB15S60L

600V15AaMOSPowerTransistor

GeneralDescription TheAOT15S60&AOB15S60&AOTF15S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOSMD

AOB15S60L

iscN-ChannelMOSFETTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=15A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.78Ω(Max) •100avalanchetested •MinimumLot-to-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

AOT15S60

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

AOT15S60

600V15AaMOSPowerTransistor

GeneralDescription TheAOT15S60&AOB15S60&AOTF15S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOSMD

AOT15S60

600V15AaMOSpowerTransistor

GeneralDescription TheAOT15S60&AOB15S60&AOTF15S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOSMD

AOT15S60L

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

AOTF15S60

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

AOTF15S60

600V15AaMOSpowerTransistor

GeneralDescription TheAOT15S60&AOB15S60&AOTF15S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOSMD

AOTF15S60

600V15AaMOSPowerTransistor

GeneralDescription TheAOT15S60&AOB15S60&AOTF15S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOSMD

AOV15S60

DFN8X8PACKAGEMARKINGDESCRIPTION

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOSMD

AOW15S60

iscN-ChannelMOSFETTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=15A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.78Ω(Max) •100avalanchetested •MinimumLot-to-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

AOW15S60

600V15AaMOSPOWERTransistor

GeneralDescription TheAOW15S60&AOWF15S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilityt

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOSMD

AOWF15S60

600V15AaMOSPOWERTransistor

GeneralDescription TheAOW15S60&AOWF15S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilityt

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOSMD

CSP15S60S-A

SuperLowBarrierHighVoltagePowerRectifier

CUHS15S60

SchottkyBarrierDiodeSiliconEpitaxial

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

F15S60S

STEALTHTMIIRectifier

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

详细参数

  • 型号:

    AOTF15S60L

  • 功能描述:

    MOSFET N-CH 600V 15A TO220F

  • RoHS:

  • 类别:

    分离式半导体产品 >> FET - 单

  • 系列:

    aMOS™

  • 标准包装:

    1,000

  • 系列:

    MESH OVERLAY™ FET

  • 型:

    MOSFET N 通道,金属氧化物 FET

  • 特点:

    逻辑电平门

  • 漏极至源极电压(Vdss):

    200V 电流 - 连续漏极(Id) @ 25°

  • C:

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C:

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大):

    4V @ 250µA 闸电荷(Qg) @

  • Vgs:

    72nC @ 10V 输入电容(Ciss) @

  • Vds:

    1560pF @ 25V 功率 -

  • 最大:

    40W

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-220-3 整包

  • 供应商设备封装:

    TO-220FP

  • 包装:

    管件

供应商型号品牌批号封装库存备注价格
Alpha & Omega Semiconductor In
23+
TO-220F
30000
晶体管-分立半导体产品-原装正品
询价
AOS
23+
TO-220
700000
公主请下单 柒号只做原装
询价
AOS
24+
TO-220F
333888
只做原装AOS现货直销
询价
AOS
23+
TO-220F
7828
支持大陆交货,美金交易。原装现货库存。
询价
AOS
2016+
TO220
6528
只做进口原装现货!假一赔十!
询价
AOS
14+
TO220
4816
原装现货低价支持实单!样品可出!
询价
AOS
22+23+
TO220
22330
绝对原装正品全新进口深圳现货
询价
AOS
QFN23
10000
原厂旗下一级分销商!原装正品现货!假一罚十!
询价
AOS/万代
13+
TO-220
28173
进口管盒现货/50
询价
23+
N/A
36100
正品授权货源可靠
询价
更多AOTF15S60L供应商 更新时间2024-4-25 11:24:00