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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
AOB11S60	文件：297.89 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=11A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.399Ω(Max) •100avalanchetested •MinimumLot-to	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
AOB11S60	文件：1.03889 Mbytes Page：8 Pages	N-Channel650V(D-S)MOSFET FEATURES •Reducedtrr,Qrr,andIRRM •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •LowswitchinglossesduetoreducedQrr •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Telecommunications -Serverandtelecompowersupplies •Light	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
AOB11S60	文件：297.68 Kbytes Page：6 Pages	600V11AaMOSPowerTransistor GeneralDescription TheAOT11S60&AOB11S60&AOTF11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOB11S60L	文件：508.66 Kbytes Page：7 Pages	600V11AaMOS GeneralDescription TheAOT11S60&AOB11S60&AOTF11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOB11S60L	文件：1.03889 Mbytes Page：8 Pages	N-Channel650V(D-S)MOSFET FEATURES •Reducedtrr,Qrr,andIRRM •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •LowswitchinglossesduetoreducedQrr •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Telecommunications -Serverandtelecompowersupplies •Light	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
AOB11S60L	文件：508.66 Kbytes Page：7 Pages	600V11AaMOS GeneralDescription TheAOT11S60&AOB11S60&AOTF11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOD11S60	文件：308.56 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
AOD11S60	文件：400.26 Kbytes Page：7 Pages	600V11AaMOSPowerTransistor GeneralDescription TheAOD11S60&AOI11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilityth	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOI11S60	文件：400.26 Kbytes Page：7 Pages	600V11AaMOSPowerTransistor GeneralDescription TheAOD11S60&AOI11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilityth	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOI11S60	文件：316.76 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
AOT11S60	文件：1.033099 Mbytes Page：8 Pages	N-Channel650V(D-S)MOSFET	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
AOT11S60	文件：297.68 Kbytes Page：6 Pages	600V11AaMOSPowerTransistor GeneralDescription TheAOT11S60&AOB11S60&AOTF11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOT11S60L	文件：304.4 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
AOT11S60L	文件：508.66 Kbytes Page：7 Pages	600V11AaMOS GeneralDescription TheAOT11S60&AOB11S60&AOTF11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOT11S60L	文件：508.66 Kbytes Page：7 Pages	600V11AaMOS GeneralDescription TheAOT11S60&AOB11S60&AOTF11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOTF11S60	文件：508.66 Kbytes Page：7 Pages	600V11AaMOS GeneralDescription TheAOT11S60&AOB11S60&AOTF11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOTF11S60	文件：1.70843 Mbytes Page：5 Pages	N-ChannelMOSFETusesadvancedtrenchtechnology	DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司	DOINGTER
AOTF11S60	文件：508.66 Kbytes Page：7 Pages	600V11AaMOS GeneralDescription TheAOT11S60&AOB11S60&AOTF11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOTF11S60	文件：297.68 Kbytes Page：6 Pages	600V11AaMOSPowerTransistor GeneralDescription TheAOT11S60&AOB11S60&AOTF11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOTF11S60	文件：297.75 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市仟禧电子有限公司	AOD11S60MOS(场效应管)	ALPHA	22+	SOT-252	20000	保证原装正品,假一陪十	询价
深圳市威尔健半导体有限公司	AOD11S60MOS(场效应管)	AOS/万代	23+	TO-252	50000	全新原装正品现货,支持订货	询价
深圳市吉利鑫科技发展有限公司	AOD11S60MOS(场效应管)	AOS/万代	2022+	TO-252	79999		询价
深圳市华集芯实业有限公司	AOD11S60MOS(场效应管)	AOS/万代	23+	TO-252	6000	公司十几年如一日,只做原装正品,优势渠道保证每一片	询价
深圳市卓越微芯电子有限公司	AOD1206	AOS	2020+	TO-252	648	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市华来深电子有限公司	AOD1206	AOS	23+	TO-252	8560	受权代理!全新原装现货特价热卖!	询价
贸泽芯城（深圳）电子科技有限公司	AOD-1206-3D	ALPHA	2021+		45800	原厂授权代理,海外优势订货渠道。可提供大量库存,详	询价
深圳市宏捷佳电子科技有限公司	AOD1222	AOS	23+	TO-252	12300	全新原装真实库存含13点增值税票!	询价
深圳市国宇半导体科技有限公司	AOD1222	AOS/万代	23+	TO-252	10000	公司只做原装正品	询价
深圳市河锋鑫科技有限公司	AOD1222	AOS/ 万代	TO-252	22+	6000	十年配单,只做原装	询价

更多AOD11S60MOS(场效应管)供应商更新时间2024-4-21 14:11:00

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