N-Channel 650V (D-S) Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction

文件：1.10793 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

N-Channel 650V (D-S) Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction

文件：1.10697 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

600V 4A a MOS TM Power Transistor

General Description The AOT4S60 & AOB4S60 & AOTF4S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche c

文件：301.91 Kbytes 页数：6 Pages

AOSMD

万国半导体

600V, 5A Alpha IGBT with Diode

General Description The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt conditions and resistance to oscillations. The soft copac

文件：598.46 Kbytes 页数：9 Pages

AOSMD

万国半导体

IGBT

FEATURES · Low VCE(sat) Enables High Effiencies · Very Fast and Soft Recovery Freewheeling Diode · Low Turn-off Switching Loss and Softness APPLICATIONS · Motor Drives · Refrigerators and Washing Machines

文件：506.25 Kbytes 页数：4 Pages

ISC

无锡固电

600V, aMOS5TM N-Channel Power Transistor

General Description • Proprietary aMOS5TM technology• Low RDS(ON)• Optimized switching parameters for better EMI performance• Enhanced body diode for robustness and fast reverse recovery Applications • SMPS with PFC, Flyback and LLC topologies• Silver ATX,adapter,TV,lighting,Server power

文件：535.02 Kbytes 页数：6 Pages

AOSMD

万国半导体

700V, aMOS5TM N-Channel Power Transistor

General Description • Proprietary aMOS5TM technology• Low RDS(ON)• Optimized switching parameters for better EMI performance• Enhanced body diode for robustness and fast reverse recovery Applications • Flyback for SMPS• Charger ,PD Adapter, TV, lighting.

文件：534.23 Kbytes 页数：6 Pages

AOSMD

万国半导体

150V N-Channel MOSFET

General Description • Trench Power MOSFET technology • Combined of low RDS(ON) and wide safe operatiing area (SOA) • Higher in-rush current enabled for faster start-up and shorter down time • RoHS and Halogen-Free Compliant Applications • Telecom Hot-Swap • Load switch • BMS • Motor

文件：658.48 Kbytes 页数：6 Pages

AOSMD

万国半导体

60V N-Channel AlphaSGT TM

General Description • Trench Power AlphaSGTTM technology • Low RDS(ON) • Excellent Gate Charge x RDS(ON) Product (FOM) • RoHS and Halogen-Free Compliant Applications • High Frequency Switching and Synchronous Rectification • BLDC

文件：400.5 Kbytes 页数：6 Pages

AOSMD

万国半导体

60V N-Channel AlphaSGT TM

General Description • Trench Power AlphaSGTTM technology • Low RDS(ON) • Excellent Gate Charge x RDS(ON) Product (FOM) • RoHS and Halogen-Free Compliant Applications • High Frequency Switching and Synchronous Rectification • BLDC

文件：400.5 Kbytes 页数：6 Pages

AOSMD

万国半导体