丝印：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

• FEATURES • With TO-263( D2PAK ) packaging • High speed switching • Standard level gate drive • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • Switching applications

文件：282.52 Kbytes 页数：2 Pages

ISC

无锡固电

60V P-Channel MOSFET

General Description The AOB411L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Product Summary

文件：326.78 Kbytes 页数：6 Pages

AOSMD

万国半导体

100V N-Channel MOSFET

General Description The AOT412 & AOB412L are fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge & low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching a

文件：313.05 Kbytes 页数：7 Pages

AOSMD

万国半导体

丝印：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

• DESCRITION • Be suitable for synchronous rectification for server and general purpose applications • FEATURES • Drain Current –ID= 51A@ TC=25℃ • Drain Source Voltage- : VDSS= 100V(Min) • Static Drain-Source On-Resistance : RDS(on) = 25mΩ (Max) • 100 avalanche tested • Minimum

文件：282.04 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel SDMOS TM Power Transistor

General Description The AOB414 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power conversion. AOB414L ( Green Product ) is offered in a lead-free package.

文件：350.41 Kbytes 页数：7 Pages

AOSMD

万国半导体

丝印：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

• DESCRITION • Be suitable for synchronous rectification for server and general purpose applications • FEATURES • Drain Current –ID= 45A@ TC=25℃ • Drain Source Voltage- : VDSS= 100V(Min) • Static Drain-Source On-Resistance : RDS(on) = 36mΩ (Max) • 100 avalanche tested • Minimum

文件：283.02 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOB416 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power conversion. Standard Product AOB416 is Pb-free (meets ROHS & Sony 25

文件：120.22 Kbytes 页数：5 Pages

AOSMD

万国半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOB416 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power conversion. Standard Product AOB416 is Pb-free (meets ROHS & Sony 25

文件：120.22 Kbytes 页数：5 Pages

AOSMD

万国半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOB418 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. Standard Product AOB418 is Pb-free (meets ROHS & Sony 259 specificatio

文件：113.83 Kbytes 页数：5 Pages

AOSMD

万国半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOB4184/L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. With the excellent thermal resistance of the D2PAK package, this device is well suited for high current load applications. AOB4184 and AOB4184L are electrically identica

文件：143.06 Kbytes 页数：6 Pages

AOSMD

万国半导体