650V 25A a MOS Power Transistor

General Description The AOT25S65 & AOB25S65 & AOTF25S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanch

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AOSMD

万国半导体

650V 25A a MOS TM Power Transistor

General Description The AOT25S65 & AOB25S65 & AOTF25S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanch

文件：317.4 Kbytes 页数：7 Pages

AOSMD

万国半导体

650V 25A a MOS TM Power Transistor

General Description The AOT25S65 & AOB25S65 & AOTF25S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanch

文件：317.38 Kbytes 页数：7 Pages

AOSMD

万国半导体

丝印：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 25A@ TC=25℃ • Drain Source Voltage- : VDSS= 650V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.19Ω (Max) • 100 avalanche tested • Minimum Lot-to-

文件：297.83 Kbytes 页数：2 Pages

ISC

无锡固电

650V 25A a MOS TM Power Transistor

General Description The AOT25S65 & AOB25S65 & AOTF25S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanch

文件：317.4 Kbytes 页数：7 Pages

AOSMD

万国半导体

60V N-Channel MOSFET

General Description The AOT2606L & AOB2606L & AOTF2606L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), C

文件：354.61 Kbytes 页数：7 Pages

AOSMD

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60V N-Channel MOSFET

General Description The AOT2608L/AOB2608L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss.This device

文件：294.93 Kbytes 页数：6 Pages

AOSMD

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60V N-Channel MOSFET

General Description The AOT(B)260L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition, switching behavior is well controlled wit

文件：297.26 Kbytes 页数：6 Pages

AOSMD

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60V N-Channel MOSFET

General Description The AOT262L/AOB262L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Product Su

文件：251.7 Kbytes 页数：6 Pages

AOSMD

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60V N-Channel MOSFET

General Description The AOT264L/AOB264L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Product Su

文件：299.38 Kbytes 页数：6 Pages

AOSMD

万国半导体