600V, aMOS5TM N-Channel Power Transistor

General Description • Proprietary αMOS5TM technology• Low RDS(ON)• Optimized switching parameters for better EMI performance• Enhanced body diode for robustness and fast reverse recovery Applications • SMPS with PFC,Flyback and LLC topologies• Micro inverter with DC/AC inverter topology

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AOSMD

万国半导体

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 24A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.16Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-AC inverter, power switch

文件：306.03 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current : ID= 20A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.26Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·motor drive,

文件：332.65 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 20A@ TC=25℃ • Drain Source Voltage- : VDSS=600V(Min) • Static Drain-Source On-Resistance : RDS(on) =0.199Ω (Max) • 100 avalanche tested • Minimum Lot-to-L

文件：299.39 Kbytes 页数：2 Pages

ISC

无锡固电

600V 20A a MOS Power Transistor

General Description The AOT20S60 & AOB20S60 & AOTF20S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanch

文件：330.4 Kbytes 页数：7 Pages

AOSMD

万国半导体

600V 20A a MOS TM Power Transistor

General Description The AOT20S60 & AOB20S60 & AOTF20S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanch

文件：330.39 Kbytes 页数：7 Pages

AOSMD

万国半导体

600V 20A a MOS

General Description The AOT20S60 & AOB20S60 & AOTF20S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanch

文件：519.87 Kbytes 页数：7 Pages

AOSMD

万国半导体

40V N-Channel MOSFET

General Description The AOT240L & AOB240L & AOTF240L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of RDS(ON) and Crss. Product Summary VDS

文件：360.51 Kbytes 页数：7 Pages

AOSMD

万国半导体

150V N-Channel MOSFET

General Description The AOT254L/AOB254L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device

文件：311.9 Kbytes 页数：6 Pages

AOSMD

万国半导体

150V N-Channel MOSFET

General Description The AOB256L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal

文件：292.83 Kbytes 页数：6 Pages

AOSMD

万国半导体