丝印：AOB；Package：8LdMSOP；Low Noise, Low Power, 100 Taps, Digitally Controlled Potentiometer (XDCP??

文件：625.63 Kbytes 页数：13 Pages

RENESAS

瑞萨

600V,aMOS5TM N-Channel Power Transistor

General Description • Proprietary αMOS5TM technology• Low RDS(ON)• Optimized switching parameters for better EMI performance• Enhanced body diode for robustness and fast reverse recovery Applications • SMPS with PFC, Flyback and LLC topologies• Micro inverter with DC/AC inverter topology

文件：463.58 Kbytes 页数：6 Pages

AOSMD

万国半导体

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 38A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.095Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and SMPS with PFC

文件：306.98 Kbytes 页数：2 Pages

ISC

无锡固电

600V, 10A Alpha IGBT with Diode

General Description The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt conditions and resistance to oscillations. The soft copac

文件：593.35 Kbytes 页数：9 Pages

AOSMD

万国半导体

IGBT

FEATURES · Low Saturation Voltage:VCE(sat)=2.0V@IC=10A · Very Good EMI Behavior · Very Fast And soft Recovery Freewheeling Diode · High Short-circuit Ruggedness APPLICATIONS · Home Appliances · Sewing Machines · Motor Drives

文件：308.02 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 10A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.75Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch

文件：305.78 Kbytes 页数：2 Pages

ISC

无锡固电

600V,10A N-Channel MOSFET

General Description The AOT10N60 & AOB10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed aval

文件：264.79 Kbytes 页数：6 Pages

AOSMD

万国半导体

100V N-Channel Rugged Planar MOSFET

General Description The AOT1100L/AOB1100L uses a robust technology that is designed to provide efficient and reliable power conversion even in the most demanding applications, including motor control. With low RDS(ON) and excellent thermal capability this device is appropriate for high current sw

文件：297.58 Kbytes 页数：6 Pages

AOSMD

万国半导体

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 11A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.44Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and AC-DC applications

文件：306.33 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：D2PAK；Package：TO-263；N-Channel 650 V (D-S) MOSFET

FEATURES • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Telecommunications - Server and telecom power supplies • Light

文件：1.03889 Mbytes 页数：8 Pages

VBSEMI

微碧半导体