100V N-Channel AlphaSGTTM

General Description • Trench Power MOSFET - AlphaSGTTM technology • Extremely Low RDS(ON) • Optimized switching performance • 175°C operating temperature • RoHS and Halogen-Free Compliant Applications • Telecom DC-DC • Industrial power • Load switch

文件：668 Kbytes 页数：6 Pages

AOSMD

万国半导体

100V N-Channel AlphaSGTTM

General Description • Trench Power MOSFET - AlphaSGTTM technology • Combined of low RDS(ON) and wide safe operatiing area (SOA) • Higher in-rush current enabled for faster start-up and shorter down time • RoHS and Halogen-Free Compliant Applications • Telecom Hot-Swap • Load switch • BMS •

文件：382.15 Kbytes 页数：6 Pages

AOSMD

万国半导体

100V N-Channel AlphaSGT TM

General Description • Trench Power AlphaSGTTM technology 100V • Combined of low RDS(ON) and wide Safe Operating Area (SOA) • Higher in-rush current enabled for faster start-up and shorter down time • RoHS 2.0 and Halogen-Free Compliant Applications • Load switch • BMS • Hot Swap

文件：388.68 Kbytes 页数：6 Pages

AOSMD

万国半导体

N-Channel 650V (D-S)Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction

文件：1.10574 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

600V 7A a MOS Power Transistor

General Description The AOT7S60 & AOB7S60 & AOTF7S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche c

文件：293.19 Kbytes 页数：6 Pages

AOSMD

万国半导体

丝印：D2PAK；Package：TO-263；N-Channel 650 V (D-S) MOSFET

FEATURES • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Telecommunications - Server and telecom power supplies • Light

文件：1.03889 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

650V 7A a MOS Power Transistor

General Description The AOT7S65L & AOB7S65L & AOTF7S65L & AOTF7S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guar

文件：308.21 Kbytes 页数：7 Pages

AOSMD

万国半导体

N-Channel 650V (D-S)Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction

文件：1.10572 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

650V 7A a MOS

General Description The AOT7S65L & AOB7S65L & AOTF7S65L & AOTF7S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guar

文件：557.01 Kbytes 页数：7 Pages

AOSMD

万国半导体

700V, 9A N-Channel MOSFET

The AOT9N70 & AOTF9N70 & AOB9N70 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low R DS(on), C iss and C rss along with guaranteed avalanche capabil

文件：402.87 Kbytes 页数：6 Pages

AOSMD

万国半导体