丝印：AID；Package：VSSOP；DUAL PROCESSOR SUPERVISORY CIRCUITS WITH POWER-FAIL

FEATURES · Dual Supervisory Circuits With Power-Fail for DSP and Processor-Based Systems · Voltage Monitor for Power-Fail or Low-Battery Warning · Watchdog Timer With 0.8 Second Time-Out · Power-On Reset Generator With Integrated 100 ms Delay Time · Open-Drain Reset and Power-Fail Output

文件：589.39 Kbytes 页数：22 Pages

TI

德州仪器

丝印：AID；Package：VSSOP；DUAL PROCESSOR SUPERVISORY CIRCUITS WITH POWER-FAIL

FEATURES · Dual Supervisory Circuits With Power-Fail for DSP and Processor-Based Systems · Voltage Monitor for Power-Fail or Low-Battery Warning · Watchdog Timer With 0.8 Second Time-Out · Power-On Reset Generator With Integrated 100 ms Delay Time · Open-Drain Reset and Power-Fail Output

文件：589.39 Kbytes 页数：22 Pages

TI

德州仪器

丝印：AID；Package：VSSOP；DUAL PROCESSOR SUPERVISORY CIRCUITS WITH POWER-FAIL

FEATURES · Dual Supervisory Circuits With Power-Fail for DSP and Processor-Based Systems · Voltage Monitor for Power-Fail or Low-Battery Warning · Watchdog Timer With 0.8 Second Time-Out · Power-On Reset Generator With Integrated 100 ms Delay Time · Open-Drain Reset and Power-Fail Output

文件：589.39 Kbytes 页数：22 Pages

TI

德州仪器

丝印：AID；Package：VSSOP；DUAL PROCESSOR SUPERVISORY CIRCUITS WITH POWER-FAIL

FEATURES · Dual Supervisory Circuits With Power-Fail for DSP and Processor-Based Systems · Voltage Monitor for Power-Fail or Low-Battery Warning · Watchdog Timer With 0.8 Second Time-Out · Power-On Reset Generator With Integrated 100 ms Delay Time · Open-Drain Reset and Power-Fail Output

文件：589.39 Kbytes 页数：22 Pages

TI

德州仪器

丝印：AD0865C5；Package：PG-TO263-2-1；650V/8A Silicon Carbide Schottky Diode in D2PAK (Real 2 Pins) CoolSiC™ Automotive Schottky Diode 650V G5

Features  Revolutionary semiconductor material - Silicon Carbide  Benchmark switching behavior  No reverse recovery/ No forward recovery  Temperature independent switching behavior  High surge current capability  Pb-free lead plating; RoHS compliant  Junction Temperature range from -

文件：927.46 Kbytes 页数：11 Pages

Infineon

英飞凌

丝印：AD1065C5；Package：PG-TO263-2-1；650V/10A Silicon Carbide Schottky Diode in D2PAK (Real 2 Pins) CoolSiC™ Automotive Schottky Diode 650V G5

Features  Revolutionary semiconductor material - Silicon Carbide  Benchmark switching behavior  No reverse recovery/ No forward recovery  Temperature independent switching behavior  High surge current capability  Pb-free lead plating; RoHS compliant  Junction Temperature range from -

文件：933.97 Kbytes 页数：11 Pages

Infineon

英飞凌

丝印：AD1265C5；Package：PG-TO263-2-1；650V/12A Silicon Carbide Schottky Diode in D2PAK (Real 2 Pins) CoolSiC™ Automotive Schottky Diode 650V G5

Features  Revolutionary semiconductor material - Silicon Carbide  Benchmark switching behavior  No reverse recovery/ No forward recovery  Temperature independent switching behavior  High surge current capability  Pb-free lead plating; RoHS compliant  Junction Temperature range from -

文件：925.92 Kbytes 页数：11 Pages

Infineon

英飞凌

丝印：AD1665C5；Package：PG-TO263-2-1；650V/16A Silicon Carbide Schottky Diode in D2PAK (Real 2 Pins) CoolSiC™ Automotive Schottky Diode 650V G5

Features • Revolutionary semiconductor material - Silicon Carbide • Benchmark switching behavior • No reverse recovery/No forward recovery • Temperature independent switching behavior • High surge current capability • Pb-free lead plating; RoHS compliant • Junction Temperature range

文件：753.32 Kbytes 页数：11 Pages

Infineon

英飞凌

丝印：AD1065C5；Package：PG-TO247-3-41；650V/10A Silicon Carbide Schottky Diode in TO247-3 CoolSiC™ Automotive Schottky Diode 650V G5

Features  Revolutionary semiconductor material - Silicon Carbide  Benchmark switching behavior  No reverse recovery/ No forward recovery  Temperature independent switching behavior  High surge current capability  Pb-free lead plating; RoHS compliant  Junction Temperature range from -

文件：844.27 Kbytes 页数：11 Pages

Infineon

英飞凌

丝印：AD1265C5；Package：PG-TO247-3-41；650V/12A Silicon Carbide Schottky Diode in TO247-3 CoolSiC™ Automotive Schottky Diode 650V G5

Features  Revolutionary semiconductor material - Silicon Carbide  Benchmark switching behavior  No reverse recovery/ No forward recovery  Temperature independent switching behavior  High surge current capability  Pb-free lead plating; RoHS compliant  Junction Temperature range from -

文件：843.64 Kbytes 页数：11 Pages

Infineon

英飞凌