丝印：AD1065C5；Package：PG-TO263-2-1；650V/10A Silicon Carbide Schottky Diode in D2PAK (Real 2 Pins) CoolSiC™ Automotive Schottky Diode 650V G5

Features  Revolutionary semiconductor material - Silicon Carbide  Benchmark switching behavior  No reverse recovery/ No forward recovery  Temperature independent switching behavior  High surge current capability  Pb-free lead plating; RoHS compliant  Junction Temperature range from -

文件：933.97 Kbytes 页数：11 Pages

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英飞凌

第五代 CoolSiC ™汽车肖特基二极管代表了英飞凌在碳化硅肖特基势垒二极管领域的领先技术

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英飞凌

包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DISCRETE DIODES

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英飞凌

650V/10A Silicon Carbide Schottky Diode in TO247-3 CoolSiC™ Automotive Schottky Diode 650V G5

Features  Revolutionary semiconductor material - Silicon Carbide  Benchmark switching behavior  No reverse recovery/ No forward recovery  Temperature independent switching behavior  High surge current capability  Pb-free lead plating; RoHS compliant  Junction Temperature range from -

文件：844.27 Kbytes 页数：11 Pages

Infineon

英飞凌