CoolSiC™ 肖特基二极管

Thanks to a compact design and a technology based on thin wafers, this family of products shows improved efficiency over all load conditions resulting from both its thermalcharacteristics and low figure of merit (Qc x Vf). This product family has been designed to complement Infineon’s IGBT and CoolM • Revolutionary semiconductor material - Silicon Carbide\n• Benchmark switching behavior\n• No reverse recovery/ No forward recovery\n• Temperature independent switching behavior\n• High surge current capability\n• Pb-free lead plating; RoHS compliant\n• Junction Temperature range from -40°C to 175°;

Infineon

英飞凌

丝印：AD0865C5；Package：PG-TO263-2-1；650V/8A Silicon Carbide Schottky Diode in D2PAK (Real 2 Pins) CoolSiC™ Automotive Schottky Diode 650V G5

Features  Revolutionary semiconductor material - Silicon Carbide  Benchmark switching behavior  No reverse recovery/ No forward recovery  Temperature independent switching behavior  High surge current capability  Pb-free lead plating; RoHS compliant  Junction Temperature range from -

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Infineon

英飞凌

包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DISCRETE DIODES

Infineon

英飞凌

TO263-7

Infineon

英飞凌

上传：深圳市威尔健半导体有限公司

PG-TO247-3

Infineon

英飞凌

上传：深圳市斌腾达科技有限公司