丝印：AGE40EF5；Package：PG-TO263-7-11；High speed FAST IGBT in TRENCHSTOPTM 5 F5 technology

Features and Benefits: • Best-in-Class efficiency in hard switching and resonant topologies • 650V breakdown voltage • Low gate charge QG • Maximum junction temperature 175°C • Dynamically stress tested • Qualified according to AEC-Q101 • Pb-free lead plating; RoHS compliant • Innovative

文件：1.71006 Mbytes 页数：14 Pages

Infineon

英飞凌

采用小型 SMD 封装的世界一流低成本电源，适用于快速开关应用

Energy efficiency is the most important aspect for electric vehicles and hybrid vehicles. Therefore, Infineon has developed the 650 V TRENCHSTOP™ 5 AUTO technology with H5/F5 optimization to enable highest efficiency fast switching automotive applications such as On-Board Charger, PFC, DC/DC and DC/ • TRENCHSTOP™ 5 technology with low VCEsat, optimized as F5 variant (Highest Efficiency Variant) for highest possible switching speed\n• 650V break-down voltage, 40A nominal current\n• Very fast switching (up to 150kHz)\n• Automotive qualified in accordance to Infineon quality standards\n• Max junct;

Infineon

英飞凌

High speed fast IGBT in TRENCHSTOPTM 5 technology

文件：1.80213 Mbytes 页数：14 Pages

Infineon

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650V IGBT high speed switching series fifth generation

文件：2.30767 Mbytes 页数：15 Pages

Infineon

英飞凌

High speed 5 FAST IGBT in TRENCHSTOP 5 technology

文件：2.49694 Mbytes 页数：15 Pages

Infineon

英飞凌