Features

 Revolutionary semiconductor material - Silicon Carbide

 Benchmark switching behavior

 No reverse recovery/ No forward recovery

 Temperature independent switching behavior

 High surge current capability

 Pb-free lead plating; RoHS compliant

 Junction Temperature range from -40°C to 175°C

 System efficiency improvement over Si diodes

 System cost / size savings due to reduced cooling requirements

 Enabling higher frequency / increased power density solutions

 Higher system reliability due to lower operating temperatures

 Reduced EMI

Potential Applications

 Traction inverter

 Booster / DCDC Converter

 On board Charger / PFC

Description

The 5th Generation CoolSiC™ Automotive Schottky Diode represents Infineon leading edge technology for

Silicon Carbide Schottky Barrier diodes. Thanks to a compact design and a technology based on thin wafers,

this family of products shows improved efficiency over all load conditions resulting from both its thermal

characteristics and low figure of merit (Qc x Vf). This product family has been designed to complement

Infineon’s IGBT and CoolMOS™ portfolio. This ensures meeting the most stringent application requirements in

the 650V voltage class.

AIDW12S65C5属于分立半导体产品 > 二极管 - 整流器 - 单。英飞凌科技公司制造生产的AIDW12S65C5二极管 - 整流器 - 单单整流器二极管系列产品可用于让电流仅沿一个方向流动，并且每个器件封装都恰好实现该功能的一个实例。其他用途的二极管（包括齐纳二极管和可变电容二极管）单独列在各自的产品系列中，每个器件封装中包含多个二极管的产品也是如此。