IGBT 650V FS4 高速版，适用于 OBC 应用，D2PAK 封装

Using the novel field stop 4th generation IGBT technology and AEC-Q101 Qualified. AFGB30T65SQDN offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications. • AEC-Q101 Qualified\n• For Automotive\n• VCE(sat) = 1.6 V (typ.) @ IC = 30 A\n• Low conduction loss\n• Low VF soft recoveryco-packaged diode\n• Low noise and conduction loss;

ONSEMI

安森美半导体

丝印：30T65SQDN；Package：D2PAK；IGBT for Automotive Applications

文件：235.33 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

IGBT for Automotive Application 650 V, 30 A

Using novel field stop IGBT technology, onsemi’s new series of FS4 IGBTs offer the optimum performance for automotive applications. This technology is Short circuit rated and offers high figure of merit with low conduction and switching losses. Features • Maximum Junction Temperature: TJ = 17

文件：331.91 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Control Integrated POwer System

文件：1.23983 Mbytes 页数：17 Pages

Infineon

英飞凌

Schottky Barrier Diode

文件：1.12003 Mbytes 页数：5 Pages

ROHM

罗姆