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首页>AFGB30T65SQDN>芯片详情
AFGB30T65SQDN_ONSEMI/安森美半导体_IGBT for Automotive Applications高捷芯城一部
- 详细信息
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产品属性
- 类型描述 
- 制造商编号:AFGB30T65SQDN 
- 生产厂家:安森美 
- Pb-free:Pb 
- AEC Qualified:A 
- PPAP Capablee:P 
- Status:Active 
- V(BR)CES Typ (V):650 
- IC Max (A):30 
- VCE(sat) Typ (V):1.6 
- VF Typ (V):1.5 
- Eoff Typ (mJ):0.16 
- Eon Typ (mJ):0.786 
- Trr Typ (ns):131 
- Gate Charge Typ (nC):56 
- Short Circuit Withstand (µs):- 
- EAS Typ (mJ):- 
- PD Max (W):220 
- Co-Packaged Diode:Yes 
- Package Type:D2PAK-3/TO-263-2 
供应商
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