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首页>AFGB30T65SQDN>芯片详情
AFGB30T65SQDN_ONSEMI/安森美半导体_IGBT for Automotive Applications高捷芯城一部
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产品属性
- 类型
描述
- 型号
:AFGB30T65SQDN
- Pb-free
:Pb
- AEC Qualified
:A
- PPAP Capablee
:P
- Status
:Active
- V(BR)CES Typ (V)
:650
- IC Max (A)
:30
- VCE(sat) Typ (V)
:1.6
- VF Typ (V)
:1.5
- Eoff Typ (mJ)
:0.16
- Eon Typ (mJ)
:0.786
- Trr Typ (ns)
:131
- Gate Charge Typ (nC)
:56
- Short Circuit Withstand (µs)
:-
- EAS Typ (mJ)
:-
- PD Max (W)
:220
- Co-Packaged Diode
:Yes
- Package Type
:D2PAK-3/TO-263-2
供应商
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