Trench Power MOSFET

Alfa-MOS

闸能

DUAL ENHANCEMENT MODE MOSFET (N- AND P-CHANNEL)

DESCRIPTION AM6602 is available in a SOT-26 package. FEATURES  N-Channel 30V/4.9A, RDS(ON)=39mΩ(max.) @ VGS=10V RDS(ON)=68mΩ(max.) @ VGS=4.5V  P-Channel -30V/-3A, RDS(ON)=100mΩ(max.) @ VGS=-10V RDS(ON)=170mΩ(max.) @ VGS=-4.5V  Reliable and Rugged  Lead Free and Green Devices Avai

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AITSEMI

创瑞科技

Low Noise JFET

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Fairchild

仙童半导体

Complementary Enhancement Mode Field Effect Transistor

General Description The AO6602 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO6602 is Pb-free (meets ROHS & Sony 259 specifications). AO6

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AOSMD

万国半导体