Low Noise JFET

文件：803.49 Kbytes 页数：7 Pages

Fairchild

仙童半导体

Complementary Enhancement Mode Field Effect Transistor

General Description The AO6602 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO6602 is Pb-free (meets ROHS & Sony 259 specifications). AO6

文件：146 Kbytes 页数：7 Pages

AOSMD

万国半导体

30V Complementary MOSFET

文件：327.64 Kbytes 页数：9 Pages

AOSMD

万国半导体

Complementary Trench MOSFET

■ Features N-Channel ● VDS (V) = 30V ● ID =3.5 A (VGS = 10V) ● RDS(ON)

文件：2.04101 Mbytes 页数：7 Pages

KEXIN

科信电子