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AOD412

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=85A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=7.0mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOD412L

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOD412usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandlowgateresistance.ThisdeviceisideallysuitedforuseasahighsideswitchinCPUcorepowerconversion.StandardProductAOD412isPb-free(meetsROHS&Sony259specificatio

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOT412

N-ChannelSDMOSTMPowerTransistor

GeneralDescription TheAOT412andAOT412LisfabricatedwithSDMOSTMtrenchtechnologythatcombinesexcellentRDS(ON)withlowgatecharge.Theresultisoutstandingefficiencywithcontrolledswitchingbehavior.ThisuniversaltechnologyiswellsuitedforPWM,loadswitchingandgeneralpurpos

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOT412

iscN-ChannelMOSFETTransistor

•DESCRITION •Besuitableforsynchronousrectificationforserverand generalpurposeapplications •FEATURES •DrainCurrent–ID=60A@TC=25℃ •DrainSourceVoltage- :VDSS=100V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=15.8mΩ(Max) •100avalanchetested •Minimu

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOT412L

N-ChannelSDMOSTMPowerTransistor

GeneralDescription TheAOT412andAOT412LisfabricatedwithSDMOSTMtrenchtechnologythatcombinesexcellentRDS(ON)withlowgatecharge.Theresultisoutstandingefficiencywithcontrolledswitchingbehavior.ThisuniversaltechnologyiswellsuitedforPWM,loadswitchingandgeneralpurpos

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOU412

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOU412usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandlowgateresistance.ThisdeviceisideallysuitedforuseasahighsideswitchinCPUcorepowerconversion.StandardProductAOU412isPb-free(meetsROHS&Sony259specificatio

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOU412

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=85A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=7.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOU412L

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOU412usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandlowgateresistance.ThisdeviceisideallysuitedforuseasahighsideswitchinCPUcorepowerconversion.StandardProductAOU412isPb-free(meetsROHS&Sony259specificatio

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOWF412

100VN-ChannelMOSFET

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AQY412EH

NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem

FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret

PanasonicPanasonic Corporation

松下松下电器

AQY412EHA

NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem

FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret

PanasonicPanasonic Corporation

松下松下电器

AQY412EHAX

NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem

FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret

PanasonicPanasonic Corporation

松下松下电器

AQY412EHAZ

NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem

FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret

PanasonicPanasonic Corporation

松下松下电器

ASJ412

2.6mm&3.5mmAUDIOJACKSSTEREO&MONOEARPHONEJACKS

ADAM-TECHAdam Technologies, Inc.

亚当科技亚当科技股份有限公司

ASTMD412

TechsilConductiveElastomer

etc2List of Unclassifed Manufacturers

etc2未分类制造商

ASTMD412

TechsilConductiveElastomer

etc2List of Unclassifed Manufacturers

etc2未分类制造商

ASTMD412

TechsilConductiveElastomer

etc2List of Unclassifed Manufacturers

etc2未分类制造商

ASTMD412

TechsilConductiveElastomer

etc2List of Unclassifed Manufacturers

etc2未分类制造商

ASTMD412

TechsilConductiveElastomer

etc2List of Unclassifed Manufacturers

etc2未分类制造商

ASTMD412

TechsilConductiveElastomer

etc2List of Unclassifed Manufacturers

etc2未分类制造商

供应商型号品牌批号封装库存备注价格
Active现货
2022+
SOT-23-6
350000
专注工业、军工级别芯片,十五年优质供应商
询价
Active-Semi International Inc.
21+
36500
一级代理/放心采购
询价
ACTIVE-SEMI
20+
SOT23-6
1001
就找我吧!--邀您体验愉快问购元件!
询价
ACTIVE
21+
SOT23-6
50000
全新原装正品现货,支持订货
询价
ActiveSemi International Inc.
22+
SOT236
9000
原厂渠道,现货配单
询价
ActiveSemi International Inc.
21+
SOT236
13880
公司只售原装,支持实单
询价
Active-Semi International Inc.
2022+
7300
原装现货
询价
ACTIVE
22+
SOT23-6
25000
原装现货,价格优惠,假一罚十
询价
ACTIVE
16+
SOT23-6
5215
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
ACTIVE
2023+
SOT23-6
61977
16余年资质 绝对原盒原盘 更多数量
询价
更多ACT412供应商 更新时间2024-5-15 17:53:00