Dual N-Channel Enhancement Mode Power MOSFET

Description ACE112003B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a load switch or battery protection applications. Features ⚫ VDS=24V ⚫ ID=10A ⚫ RDS(ON)1@VGS = 4.5V, ≤ 7.9mΩ ⚫ RDS(ON)2@VGS = 4.0V, ≤ 8.1mΩ ⚫ RDS(ON)1@VG

文件：219.6 Kbytes 页数：3 Pages

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Dual N-Channel Enhancement Mode Power MOSFET

Description ACE112003B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a load switch or battery protection applications. Features ⚫ VDS=24V ⚫ ID=10A ⚫ RDS(ON)1@VGS = 4.5V, ≤ 7.9mΩ ⚫ RDS(ON)2@VGS = 4.0V, ≤ 8.1mΩ ⚫ RDS(ON)1@VG

文件：219.6 Kbytes 页数：3 Pages

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N-Channel Enhancement Mode MOSFET

Description The ACE11204A is the N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are

文件：221.2 Kbytes 页数：3 Pages

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N-Channel Enhancement Mode MOSFET

Description The ACE11204A is the N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are

文件：221.2 Kbytes 页数：3 Pages

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P-Channel Enhancement Mode MOSFET

Description The ACE11205A is the P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices a

文件：174.23 Kbytes 页数：3 Pages

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P-Channel Enhancement Mode MOSFET

Description The ACE11205A is the P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices a

文件：174.23 Kbytes 页数：3 Pages

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N-Channel Enhancement Mode MOSFET

Description The ACE11306A is the N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices ar

文件：198.92 Kbytes 页数：3 Pages

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N-Channel Enhancement Mode MOSFET

Description The ACE11306A is the N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices ar

文件：198.92 Kbytes 页数：3 Pages

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60V Complementary Enhancement Mode Power MOSFET

Description ⚫ used in inverter ⚫ other applications Features N-Channel ⚫ VDS= 60V ⚫ ID=4.4A ⚫ RDS(ON)@VGS= 10V, TYP 37 mΩ ⚫ RDS(ON)@VGS= 4.5V, TYP 43 mΩ P-Channel ⚫ VDS= -60V ⚫ ID=-4.2A ⚫ RDS(ON)@VGS= -10V, TYP 53 mΩ ⚫ RDS(ON)@VGS= -4.5V, TYP 60 mΩ

文件：214.48 Kbytes 页数：3 Pages

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60V Complementary Enhancement Mode Power MOSFET

Description ⚫ used in inverter ⚫ other applications Features N-Channel ⚫ VDS= 60V ⚫ ID=4.4A ⚫ RDS(ON)@VGS= 10V, TYP 37 mΩ ⚫ RDS(ON)@VGS= 4.5V, TYP 43 mΩ P-Channel ⚫ VDS= -60V ⚫ ID=-4.2A ⚫ RDS(ON)@VGS= -10V, TYP 53 mΩ ⚫ RDS(ON)@VGS= -4.5V, TYP 60 mΩ

文件：214.48 Kbytes 页数：3 Pages

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