ACE112003B

Dual N-Channel Enhancement Mode Power MOSFET

Description ACE112003BusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgate charge.Itcanbeusedinaloadswitchorbatteryprotectionapplications. Features ⚫VDS=24V ⚫ID=10A ⚫RDS(ON)1@VGS=4.5V,≤7.9mΩ ⚫RDS(ON)2@VGS=4.0V,≤8.1mΩ ⚫RDS(ON)1@VG

ACE112003BQN+H

Dual N-Channel Enhancement Mode Power MOSFET

Description ACE112003BusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgate charge.Itcanbeusedinaloadswitchorbatteryprotectionapplications. Features ⚫VDS=24V ⚫ID=10A ⚫RDS(ON)1@VGS=4.5V,≤7.9mΩ ⚫RDS(ON)2@VGS=4.0V,≤8.1mΩ ⚫RDS(ON)1@VG

112003

ScrewlessConnectorsBlockConnectors930-00/3

ST112003

ALLDIMENSIONSINMM[INCH]

T112003

ALLDIMENSIONSINMM[INCH]