Dual N-Channel Enhancement Mode Power MOSFET

Description ACE112003B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a load switch or battery protection applications. Features ⚫ VDS=24V ⚫ ID=10A ⚫ RDS(ON)1@VGS = 4.5V, ≤ 7.9mΩ ⚫ RDS(ON)2@VGS = 4.0V, ≤ 8.1mΩ ⚫ RDS(ON)1@VG

文件：219.6 Kbytes 页数：3 Pages

ACE

Dual N-Channel Enhancement Mode Power MOSFET

Description ACE112003B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a load switch or battery protection applications. Features ⚫ VDS=24V ⚫ ID=10A ⚫ RDS(ON)1@VGS = 4.5V, ≤ 7.9mΩ ⚫ RDS(ON)2@VGS = 4.0V, ≤ 8.1mΩ ⚫ RDS(ON)1@VG

文件：219.6 Kbytes 页数：3 Pages

ACE

ALL DIMENSIONS IN MM [INCH]

文件：120.3 Kbytes 页数：1 Pages

E-SWITCH

ALL DIMENSIONS IN MM [INCH]

文件：117.18 Kbytes 页数：1 Pages

E-SWITCH