N-Channel Enhancement Mode MOSFET

Description The ACE11306A is the N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices ar

文件：198.92 Kbytes 页数：3 Pages

ACE

N-Channel Enhancement Mode MOSFET

Description The ACE11306A is the N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices ar

文件：198.92 Kbytes 页数：3 Pages

ACE

MOSFET

ACE ele

PSG90809

Description RJ45 to RJ45 Category 6 patch cable with low profile strain reliefs.

文件：280.34 Kbytes 页数：2 Pages

PROSIGNAL

General Purpose Dual Package Transformers

High Isolation 2000 Vrms (T-114XX Series) Fast Rise Times Economical: 2 Transformers Per Package Reduce Printed Circuit Board Space Auto-Insertable Transfer Molded DIP Surface Mount Versions (Add Suffix G to P/N)

文件：25.31 Kbytes 页数：1 Pages

RHOMBUS-IND

Solid State Relay for DIN rail fixation

文件：359.44 Kbytes 页数：2 Pages

CELDUC

凡纪继电器