Dual N-Channel Enhancement Mode Power MOSFET With ESD Protected

Description ⚫ Battery protection ⚫ Load switching ⚫ ESD protected Features ⚫ VDS=20V ⚫ ID=10A ⚫ RDS(ON)1@VGS = 4.5V, TYP 10.1mΩ ⚫ RDS(ON)2@VGS = 4.0V, TYP 10.4mΩ ⚫ RDS(ON)1@VGS = 3.8V, TYP 10.6mΩ ⚫ RDS(ON)2@VGS = 3.1V, TYP 11.3mΩ ⚫ RDS(ON)2@VGS = 2.5V, TYP 12.5mΩ

文件：216.97 Kbytes 页数：3 Pages

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Dual N-Channel Enhancement Mode Power MOSFET With ESD Protected

Description ⚫ Battery protection ⚫ Load switching ⚫ ESD protected Features ⚫ VDS=20V ⚫ ID=10A ⚫ RDS(ON)1@VGS = 4.5V, TYP 10.1mΩ ⚫ RDS(ON)2@VGS = 4.0V, TYP 10.4mΩ ⚫ RDS(ON)1@VGS = 3.8V, TYP 10.6mΩ ⚫ RDS(ON)2@VGS = 3.1V, TYP 11.3mΩ ⚫ RDS(ON)2@VGS = 2.5V, TYP 12.5mΩ

文件：216.97 Kbytes 页数：3 Pages

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P-Channel Enhancement Mode Field Effect Transistor

General Description ⚫ load switch ⚫ other general applications Features ⚫ VDS= -20V, ID=-7A ⚫ RDS(ON)@ VGS = -4.5V, TYP=29mΩ ⚫ RDS(ON)@ VGS = -2.5V, TYP=34mΩ

文件：206.69 Kbytes 页数：2 Pages

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P-Channel Enhancement Mode Field Effect Transistor

General Description ⚫ load switch ⚫ other general applications Features ⚫ VDS= -20V, ID=-7A ⚫ RDS(ON)@ VGS = -4.5V, TYP=29mΩ ⚫ RDS(ON)@ VGS = -2.5V, TYP=34mΩ

文件：206.69 Kbytes 页数：2 Pages

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60V N-Channel Power MOSFET

Description The ACE11560LA uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. Features ⚫ VDS = 60V, ID = 50A ⚫ RDS(ON)

文件：233.11 Kbytes 页数：3 Pages

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60V N-Channel Power MOSFET

Description The ACE11560LA uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. Features ⚫ VDS = 60V, ID = 50A ⚫ RDS(ON)

文件：233.11 Kbytes 页数：3 Pages

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60V N-Channel Power MOSFET

Description The ACE11560LA uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. Features ⚫ VDS = 60V, ID = 50A ⚫ RDS(ON)

文件：233.11 Kbytes 页数：3 Pages

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P-Channel Enhancement Mode Power MOSFET

Description ⚫ Power Management Features ⚫ VDS=-20V ⚫ ID=-3.8A ⚫ RDS(ON)@VGS=-4.5V, TYP 41mΩ ⚫ RDS(ON)@VGS=-2.5V, TYP 55mΩ

文件：184.23 Kbytes 页数：2 Pages

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P-Channel Enhancement Mode Power MOSFET

Description ⚫ Power Management Features ⚫ VDS=-20V ⚫ ID=-3.8A ⚫ RDS(ON)@VGS=-4.5V, TYP 41mΩ ⚫ RDS(ON)@VGS=-2.5V, TYP 55mΩ

文件：184.23 Kbytes 页数：2 Pages

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N-Channel Enhancement Mode Power MOSFET

Description ⚫ load switching ⚫ use in PWM ⚫ general purpose applications Features ⚫ VDS=60V, ID=50A ⚫ RDS(ON)1@VGS = 10V, TYP 11mΩ ⚫ RDS(ON)2@VGS = 4.5V, TYP 16mΩ

文件：209.44 Kbytes 页数：3 Pages

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