Dual N-Channel Enhancement Mode Power MOSFET With ESD Protected

Description ⚫ Battery protection ⚫ Load switching ⚫ ESD protected Features ⚫ VDS=20V ⚫ ID=10A ⚫ RDS(ON)1@VGS = 4.5V, TYP 10.1mΩ ⚫ RDS(ON)2@VGS = 4.0V, TYP 10.4mΩ ⚫ RDS(ON)1@VGS = 3.8V, TYP 10.6mΩ ⚫ RDS(ON)2@VGS = 3.1V, TYP 11.3mΩ ⚫ RDS(ON)2@VGS = 2.5V, TYP 12.5mΩ

文件：216.97 Kbytes 页数：3 Pages

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Dual N-Channel Enhancement Mode Power MOSFET With ESD Protected

Description ⚫ Battery protection ⚫ Load switching ⚫ ESD protected Features ⚫ VDS=20V ⚫ ID=10A ⚫ RDS(ON)1@VGS = 4.5V, TYP 10.1mΩ ⚫ RDS(ON)2@VGS = 4.0V, TYP 10.4mΩ ⚫ RDS(ON)1@VGS = 3.8V, TYP 10.6mΩ ⚫ RDS(ON)2@VGS = 3.1V, TYP 11.3mΩ ⚫ RDS(ON)2@VGS = 2.5V, TYP 12.5mΩ

文件：216.97 Kbytes 页数：3 Pages

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MOSFET

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LRB Open Air Low Resistance Resistors

文件：389.77 Kbytes 页数：3 Pages

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德键电子

LRB Open Air Low Resistance Resistors

文件：389.77 Kbytes 页数：3 Pages

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德键电子

LRB Open Air Low Resistance Resistors

文件：389.77 Kbytes 页数：3 Pages

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德键电子