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IRL2203N

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRL2203NL

PowerMOSFET(Vdss=30V,Rds(on)=7.0mohm,Id=116A??

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRL2203NLPBF

HEXFET짰PowerMOSFET

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRL2203NLPBF

AdvancedProcessTechnology

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRL2203NPBF

AdvancedProcessTechnology

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRL2203NPBF

HEXFET짰PowerMOSFET

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRL2203NS

PowerMOSFET(Vdss=30V,Rds(on)=7.0mohm,Id=116A??

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRL2203NS

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRL2203NSPBF

AdvancedProcessTechnology

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRL2203NSPBF

AdvancedProcessTechnology

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRL2203NSPBF

HEXFET짰PowerMOSFET

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRL2203NSTRLPBF

AdvancedProcessTechnology

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRL2203S

PowerMOSFET(Vdss=30V,Rds(on)=0.007ohm,Id=100A??

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRLI2203

PowerMOSFET(Vdss=30V,Rds(on)=0.010ohm,Id=52A??

Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRLI2203G

PowerMOSFET(Vdss=30V,Rds(on)=0.010ohm,Id=52A??

Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRLI2203N

HEXFETPowerMOSFET

VDSS=30VR DS(on)=0.007Ω ID=61A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignth

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRLI2203NPBF

HEXFETPowerMOSFET

VDSS=30VR DS(on)=0.007Ω ID=61A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignth

IRFInternational Rectifier

英飞凌英飞凌科技公司

KSR2203

PNP(SWITCHINGAPPLICATION)

SWITCHINGAPPLICATION(BiasResistorBuiltIn) •Switchingcircuit,Inverter,Interfacecircuit,Drivercircuit •BuiltinbiasResistor(R1=22KΩ,R2=22KΩ) •ComplementtoKSR1203

SamsungSamsung Group

三星三星半导体

LP2203

200mA,DualChannelUltra-FastCMOSLDORegulator

POWERLowpower Semiconductor inc

微源半导体微源半导体股份有限公司

LP2203

CITSWITCH

CITCIT

CIT

详细参数

  • 型号:

    AA-2203C

  • 制造商:

    ETC MOLEX-INACTIVE

  • 功能描述:

    Cross Referenced to MOLEX -

  • Part:

    MOL19003-0108

供应商型号品牌批号封装库存备注价格
MOLEX
855
全新原装 货期两周
询价
原厂
2022+
进口原装
5960
授权分销商-好价格好质量就在铭昌源科技!
询价
MLX
D/C0029
1400
询价
MOLEX/莫仕
2308+
306702
一级代理,原装正品,公司现货!
询价
CAPXON-丰宾
24+25+/26+27+
DIP-2.直插
96500
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
MICREL
10+
DFN-10
42552
门市原装现货!支持实单,一片起卖!
询价
23+
N/A
46180
正品授权货源可靠
询价
MICREL
DFN-10
608900
原包原标签100%进口原装常备现货!
询价
KINGBRIGHT
20+
光电元件
9136
就找我吧!--邀您体验愉快问购元件!
询价
KINGBRIGHT
2020+
SMDSMT
880000
明嘉莱只做原装正品现货
询价
更多AA-2203C供应商 更新时间2024-5-21 16:06:00