丝印：A2S；Package：LFCSP_WD；30 V, High Speed, Low Noise, Low Bias Current, JFET Operational Amplifier

FEATURES Low offset voltage: 200 μV maximum Offset drift: 1 μV/°C typical Very low input bias current: 5 pA maximum Extended temperature range: −40°C to +125°C ±5 V to ±15 V dual supply ADA4627-1 GBW: 19 MHz ADA4637-1 GBW: 79 MHz Voltage noise: 6.1 nV/√Hz at 1 kHz ADA4627-1 slew rate: 82 V/μs

文件：780.93 Kbytes 页数：20 Pages

AD

亚德诺

丝印：A2S；Package：LFCSP_WD；30 V, High Speed, Low Noise, Low Bias Current, JFET Operational Amplifier

FEATURES Low offset voltage: 200 μV maximum Offset drift: 1 μV/°C typical Very low input bias current: 5 pA maximum Extended temperature range: −40°C to +125°C ±5 V to ±15 V dual supply ADA4627-1 GBW: 19 MHz ADA4637-1 GBW: 79 MHz Voltage noise: 6.1 nV/√Hz at 1 kHz ADA4627-1 slew rate: 82 V/μs

文件：780.93 Kbytes 页数：20 Pages

AD

亚德诺

丝印：A2S；Package：LFCSP_WD；30 V, High Speed, Low Noise, Low Bias Current, JFET Operational Amplifier

FEATURES Low offset voltage: 200 μV maximum Offset drift: 1 μV/°C typical Very low input bias current: 5 pA maximum Extended temperature range: −40°C to +125°C ±5 V to ±15 V dual supply ADA4627-1 GBW: 19 MHz ADA4637-1 GBW: 79 MHz Voltage noise: 6.1 nV/√Hz at 1 kHz ADA4627-1 slew rate: 82 V/μs

文件：780.93 Kbytes 页数：20 Pages

AD

亚德诺

丝印：A2s；Package：SOT-23；Silicon RF Switching Diode

Silicon RF Switching Diode • Low-loss VHF / UHF switch above 10 MHz • PIN diode with low forward resistance • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101

文件：432.77 Kbytes 页数：3 Pages

INFINEON

英飞凌

丝印：A2s；Package：SOT-23；Silicon RF Switching Diode

文件：60.75 Kbytes 页数：5 Pages

INFINEON

英飞凌

丝印：A2S；Package：SOT-523；SOT-523 Plastic-Encapsulate MOSFETS

文件：592.07 Kbytes 页数：4 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：A2S；Package：SOT-323；SOT-323 Plastic-Encapsulate MOSFETS

文件：669.18 Kbytes 页数：4 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：A2S；Package：SOT-323；SOT-323 Plastic-Encapsulate MOSFETS

文件：572.37 Kbytes 页数：4 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：A2SHB；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor SMD

Features 　■20V, 3.7A, RDS(ON)=50mΩ @ VGS=4.5V 　■High dense cell design for extremely low RDS(ON) 　■Rugged and reliable 　■Lead free product is acquired 　■SOT-23 Package 　■Marking Code: A2SHB 　　Case Material: Molded Plastic. 　　UL Flammability Classification Rating 94V-0

文件：276.91 Kbytes 页数：4 Pages

HAOHAI

浩海电子

丝印：A2SHB；Package：SOT-23；N-Channel 1.25-W, 2.5-V MOSFET

■ Features ● VDS=20V ● RDS(on)= 85mΩ@VGS=4.5V ,ID=3.6A ● RDS(on)= 115mΩ@VGS=2.5V ,ID=3.1A

文件：45.45 Kbytes 页数：2 Pages

KEXIN

科信电子