丝印：A2N；Package：LFCSP；22 μA, RRIO, CMOS,18 V Operational Amplifiers

FEATURES Micropower at high voltage (18 V): 22 μA maximum Low offset voltage: 350 μV maximum Low input bias current: 20 pA maximum Gain bandwidth product: 230 kHz at AV = 100 typical Unity-gain crossover: 230 kHz −3 dB closed-loop bandwidth: 305 kHz Single-supply operation: 2.7 V to 18 V Dual-s

文件：852.99 Kbytes 页数：24 Pages

AD

亚德诺

丝印：A2N；Package：LFCSP；22 μA, RRIO, CMOS,18 V Operational Amplifiers

FEATURES Micropower at high voltage (18 V): 22 μA maximum Low offset voltage: 350 μV maximum Low input bias current: 20 pA maximum Gain bandwidth product: 230 kHz at AV = 100 typical Unity-gain crossover: 230 kHz −3 dB closed-loop bandwidth: 305 kHz Single-supply operation: 2.7 V to 18 V Dual-s

文件：852.99 Kbytes 页数：24 Pages

AD

亚德诺

丝印：A2N；Package：MSOP；22 μA, RRIO, CMOS,18 V Operational Amplifiers

FEATURES Micropower at high voltage (18 V): 22 μA maximum Low offset voltage: 350 μV maximum Low input bias current: 20 pA maximum Gain bandwidth product: 230 kHz at AV = 100 typical Unity-gain crossover: 230 kHz −3 dB closed-loop bandwidth: 305 kHz Single-supply operation: 2.7 V to 18 V Dual-s

文件：852.99 Kbytes 页数：24 Pages

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亚德诺

丝印：A2N；Package：MSOP；22 μA, RRIO, CMOS,18 V Operational Amplifiers

FEATURES Micropower at high voltage (18 V): 22 μA maximum Low offset voltage: 350 μV maximum Low input bias current: 20 pA maximum Gain bandwidth product: 230 kHz at AV = 100 typical Unity-gain crossover: 230 kHz −3 dB closed-loop bandwidth: 305 kHz Single-supply operation: 2.7 V to 18 V Dual-s

文件：852.99 Kbytes 页数：24 Pages

AD

亚德诺

丝印：A2N；Package：MSOP；22 μA, RRIO, CMOS,18 V Operational Amplifiers

FEATURES Micropower at high voltage (18 V): 22 μA maximum Low offset voltage: 350 μV maximum Low input bias current: 20 pA maximum Gain bandwidth product: 230 kHz at AV = 100 typical Unity-gain crossover: 230 kHz −3 dB closed-loop bandwidth: 305 kHz Single-supply operation: 2.7 V to 18 V Dual-s

文件：852.99 Kbytes 页数：24 Pages

AD

亚德诺

丝印：A2N7002K；Package：SOT-23；NCE Automotive N-Channel Enhancement Mode Power MOSFET

General Features ● VDS = 60V,ID = 0.3A RDS(ON)

文件：361.63 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：A2N5；Package：WLCSP-8；PerSe® Contact, Low Power 3-ch. Human Sensor

Features •~1.8V Input Supply Voltage •Up to 3 Capacitive Sensor Inputs ⬧Patented Smart Sense Engine ⬧Capacitance Resolution down to 0.008fF ⬧Capacitance Offset Compensation up to 75pF ⬧Advanced Temperature Compensation •Automatic Calibration •Ultra Low Power Consumption ⬧Active Mode: 22 u

文件：938.17 Kbytes 页数：47 Pages

SEMTECH

先之科

丝印：A2N7002K；Package：SOT-23；NCE Automotive N-Channel Enhancement Mode Power MOSFET

General Features ● VDS = 60V,ID = 0.3A RDS(ON)

文件：361.63 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：RKS；Package：SOT-323；MOSFET

Features - Drive circuits can be simple. - Low on-resistance. - AEC-Q101 Qualified. - ESD protected gate up to 2KV HBM. - High-speed switching. - Parallel use is easy.

文件：500.87 Kbytes 页数：5 Pages

COMCHIP

典琦

MOSFET

Features - Drive circuits can be simple. - Low on-resistance. - AEC-Q101 Qualified. - ESD protected gate up to 2KV HBM. - High-speed switching. - Parallel use is easy.

文件：481.74 Kbytes 页数：5 Pages

COMCHIP

典琦