丝印：852；Package：MLPD-8；General Purpose Low Noise Amplifier with Bypass Switch

文件：2.65544 Mbytes 页数：30 Pages

恩XP

丝印：852B；Package：SMA；1.5W SURFACE MOUNT ZENER DIODE

Glass Passivated Die Construction 1.5W Power Dissipation 3.3V – 200V Nominal Zener Voltage 5% Standard Vz Tolerance Low Inductance For Use in Voltage Regulator or Reference Plastic Case Material has UL Flammability Classification Rating 94V-0

文件：105.77 Kbytes 页数：5 Pages

WTE

Won-Top Electronics

丝印：85222AML；Package：SOIC；Dual LVCMOS / LVTTL-TO-Differential LVHSTL Translator

FEATURES • 2 differential LVHSTL outputs • Selectable CLK0, CLK1 LVCMOS clock inputs • CLK0 and CLK1 can accept the following input levels: LVCMOS or LVTTL • Maximum output frequency: 350MHz • Part-to-part skew: 350ps (maximum) • Propagation delay: 1.3ns (maximum) • VOH: 1.2V (maximum) •

文件：358.01 Kbytes 页数：14 Pages

RENESAS

瑞萨

丝印：85222AML；Package：SOIC；Dual LVCMOS / LVTTL-TO-Differential LVHSTL Translator

FEATURES • 2 differential LVHSTL outputs • Selectable CLK0, CLK1 LVCMOS clock inputs • CLK0 and CLK1 can accept the following input levels: LVCMOS or LVTTL • Maximum output frequency: 350MHz • Part-to-part skew: 350ps (maximum) • Propagation delay: 1.3ns (maximum) • VOH: 1.2V (maximum) •

文件：358.01 Kbytes 页数：14 Pages

RENESAS

瑞萨

丝印：852LWF；Package：DFN8；Power MOSFET 80 V, 25.5 m, 25 A, Dual N?묬hannel

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD6H852NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

文件：221.87 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：852LWF；Package：DFN5；MOSFET - Power, Single N-Channel 80 V, 13.1 m, 42 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS6H852NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：189.94 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：852NWF；Package：DFN5；MOSFET - Power, Single N-Channel 80 V, 14.2 m, 43 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS6H852NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：189.71 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：85263A；Tiny Real-Time Clock/calendar with alarm function, battery switch-over, time stamp input, and I2C-bus

1. General description The PCF85263A is a CMOS1 Real-Time Clock (RTC) and calendar optimized for low power consumption and with automatic switching to battery on main power loss. The RTC can also be configured as a stop-watch (elapsed time counter). Three time log registers triggered from batt

文件：786.92 Kbytes 页数：100 Pages

恩XP

丝印：85263A；Tiny Real-Time Clock/calendar with alarm function, battery switch-over, time stamp input, and I2C-bus

1. General description The PCF85263A is a CMOS1 Real-Time Clock (RTC) and calendar optimized for low power consumption and with automatic switching to battery on main power loss. The RTC can also be configured as a stop-watch (elapsed time counter). Three time log registers triggered from batt

文件：786.92 Kbytes 页数：100 Pages

恩XP

丝印：8525BQ；Package：SON；TPS785-Q1 Automotive, 1-A, High-PSRR Low-Dropout Voltage Regulator With High Accuracy and Enable

1 Features • AEC-Q100 qualified for automotive applications: – Temperature grade 1: –40°C to +125°C, TA • Device junction temperature: –40°C to +150°C, TJ • Input voltage range: 1.7 V to 6.0 V • Available output voltages: – Adjustable option: 1.2 V to 5.5 V – Fixed options: 0.65 V to 5.0 V

文件：3.04365 Mbytes 页数：43 Pages

TI

德州仪器