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SMB6F64A

丝印:7DE;Package:DO221-AA;600 W TVS in SMB Flat

Features • Peak pulse power: 600 W (10/1000 μs) and 4 kW (8/20 μs) • Flat and thin package: 1 mm • Stand-off voltage range from 5 V to 188 V • Unidirectional type • Low leakage current: 0.2 μA at 25 °C and 1 μA at 85 °C • Operating Tj max: 175 °C • High power capability at Tj max.: up to 47

文件:681.67 Kbytes 页数:13 Pages

STMICROELECTRONICS

意法半导体

SMB6F70A

丝印:7DK;Package:DO221-AA;600 W TVS in SMB Flat

Features • Peak pulse power: 600 W (10/1000 μs) and 4 kW (8/20 μs) • Flat and thin package: 1 mm • Stand-off voltage range from 5 V to 188 V • Unidirectional type • Low leakage current: 0.2 μA at 25 °C and 1 μA at 85 °C • Operating Tj max: 175 °C • High power capability at Tj max.: up to 47

文件:681.67 Kbytes 页数:13 Pages

STMICROELECTRONICS

意法半导体

SMB6F85A

丝印:7DZ;Package:DO221-AA;600 W TVS in SMB Flat

Features • Peak pulse power: 600 W (10/1000 μs) and 4 kW (8/20 μs) • Flat and thin package: 1 mm • Stand-off voltage range from 5 V to 188 V • Unidirectional type • Low leakage current: 0.2 μA at 25 °C and 1 μA at 85 °C • Operating Tj max: 175 °C • High power capability at Tj max.: up to 47

文件:681.67 Kbytes 页数:13 Pages

STMICROELECTRONICS

意法半导体

NTMFS7D5N15MC

丝印:7D515M;Package:PQFN8;MOSFET - N-Channel Shielded Gate PowerTrench 150 V, 7.9 m, 95.6 A

文件:281.03 Kbytes 页数:9 Pages

ONSEMI

安森美半导体

NTMFS7D8N10G

丝印:7D8N10;Package:PQFN8;MOSFET - Power, Single N-Channel, PQFN8 100 V, 7.6 m, 110 A

文件:266.71 Kbytes 页数:8 Pages

ONSEMI

安森美半导体

NTMYS7D3N04CLTWG

丝印:7D3N04CL;Package:LFPAK4;Power MOSFET 40 V, 7.3 m, 52 A, Single N?묬hannel

文件:322.15 Kbytes 页数:7 Pages

ONSEMI

安森美半导体

PSMN7R5-30MLD

丝印:7D530L;Package:LFPAK33;N-channel 30 V, 7.5 m廓 logic level MOSFET in LFPAK33 using NextPowerS3 Technology

文件:723.98 Kbytes 页数:13 Pages

NEXPERIA

安世

PSMN7R5-30YLD

丝印:7D530L;Package:LFPAK56;N-channel 30 V, 7.5 m廓 logic level MOSFET in LFPAK56 using NextPowerS3 Technology

文件:726.09 Kbytes 页数:13 Pages

NEXPERIA

安世

STL7DN6LF3

丝印:7DN6LF3;Package:PowerFLAT5x6doubleisland;Automotive-grade dual N-channel 60 V, 35 m??typ., 6.5 A STripFET??F3 Power MOSFET in PowerFLAT??5x6 double island

文件:992.85 Kbytes 页数:18 Pages

STMICROELECTRONICS

意法半导体

7D048000H01

无源晶振

HDF

浩都频率

HDF

技术参数

  • 封装/外壳:

    bF

  • 长x宽/尺寸:

    2.00 x 1.60mm

  • 高度:

    0.50mm

  • 类型:

    贴片晶振

  • 频率误差:

    ±10ppm

  • 安装类型:

    SMT

  • 主频频率:

    34.4064MHz

  • 负载电容:

    10pF

  • 等效串联电阻:

    40Ω

  • 年老化率:

    ±3ppm/year

  • 频率稳定性:

    ±20ppm

  • 原始制造商:

    cA

  • 原产国家:

    China

  • 存储温度:

    -55℃~+125℃

  • 元件生命周期:

    c_

  • 产品状态:

    c_

  • 是否无铅:

    Yes

  • 谐振模式:

    Fundamental

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更多7D供应商 更新时间2026-1-30 16:41:00