N-Channel Shielded Gate PowerTrench® MOSFET 100V, 110A, 7.6mΩ

This N-Channel MV MOSFET is produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain a wide safe operating area for ruggedness and robustness. • Shielded Gate MOSFET Technology\n• Max rDS(on) = 7.6 mΩ at VGS = 10 V, ID = 48 A\n•MSL1 Robust Package Design\n•100% UIL Tested\n•RoHS Compliant\n• Wide SOA performance\n;

ONSEMI

安森美半导体

丝印：7D8N10；Package：PQFN8；MOSFET - Power, Single N-Channel, PQFN8 100 V, 7.6 m, 110 A

文件：266.71 Kbytes 页数：8 Pages

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安森美半导体

DFN-8

ON

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SOP8

ON

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SMD

ON/安森美

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