125째C DYNAMIC OPERATING LIFE TEST

文件：93.9 Kbytes 页数：11 Pages

ATMEL

爱特梅尔

PROBLEM SOLVING AND SPECIAL APPLICATION CARTRIDGE

文件：254.5 Kbytes 页数：2 Pages

PENTAIR

滨特尔

VERSAPAC INDUSTRIAL RELAY

文件：952.54 Kbytes 页数：2 Pages

OENINDIA

Metal Oxide Varistors

文件：670.03 Kbytes 页数：4 Pages

YINT

音特电子

丝印：7DXYY；1.6 A Li-Ion/Polymer Battery Charger

Features  USB or AC adapter system power charger  Programmable from 100 mA to 1.6 A max.  Input voltage range: 4.0 V  7.5 V  High level of integration with internal:  Charging device  Reverse blocking diode  Current sensing  Digitized thermal regulation  Charge current programmi

文件：1.29072 Mbytes 页数：21 Pages

SKYWORKS

思佳讯

丝印：7DXYY；1.6 A Li-Ion/Polymer Battery Charger

Features  USB or AC adapter system power charger  Programmable from 100 mA to 1.6 A max.  Input voltage range: 4.0 V  7.5 V  High level of integration with internal:  Charging device  Reverse blocking diode  Current sensing  Digitized thermal regulation  Charge current programmi

文件：1.29072 Mbytes 页数：21 Pages

SKYWORKS

思佳讯

丝印：7D8；Package：SOT523；N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance: RDS(ON)  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e

文件：517.059 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：7D8；Package：SOT523；N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance: RDS(ON)  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e

文件：517.059 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：7D0N06C；Package：LFPAK4；MOSFET - Power, Single N-Channel 60 V, 7.0 m, 66 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：214.66 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：7D3N04CL；Package：LFPAK4；MOSFET – Power, Single N-Channel 40 V, 7.3 m, 52 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：340.7 Kbytes 页数：7 Pages

ONSEMI

安森美半导体