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型号	下载订购	功能描述	制造商上传企业	LOGO
71V124SA12YGI8	文件：192.06 Kbytes Page：9 Pages	3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise ◆ Equal access and cycle times – Commercial: 10/12/15ns – Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Inputs and outputs are LVTTL-compatible 文件：192.06 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
71V124SA15PHG	文件：192.06 Kbytes Page：9 Pages	3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise ◆ Equal access and cycle times – Commercial: 10/12/15ns – Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Inputs and outputs are LVTTL-compatible 文件：192.06 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
71V124SA15PHG8	文件：192.06 Kbytes Page：9 Pages	3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise ◆ Equal access and cycle times – Commercial: 10/12/15ns – Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Inputs and outputs are LVTTL-compatible 文件：192.06 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
71V124SA15PHGI	文件：192.06 Kbytes Page：9 Pages	3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise ◆ Equal access and cycle times – Commercial: 10/12/15ns – Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Inputs and outputs are LVTTL-compatible 文件：192.06 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
71V124SA15PHGI8	文件：192.06 Kbytes Page：9 Pages	3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise ◆ Equal access and cycle times – Commercial: 10/12/15ns – Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Inputs and outputs are LVTTL-compatible 文件：192.06 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
71V124SA15TYG	文件：192.06 Kbytes Page：9 Pages	3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise ◆ Equal access and cycle times – Commercial: 10/12/15ns – Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Inputs and outputs are LVTTL-compatible 文件：192.06 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
71V124SA15TYG8	文件：192.06 Kbytes Page：9 Pages	3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise ◆ Equal access and cycle times – Commercial: 10/12/15ns – Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Inputs and outputs are LVTTL-compatible 文件：192.06 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
71V124SA15TYGI	文件：192.06 Kbytes Page：9 Pages	3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise ◆ Equal access and cycle times – Commercial: 10/12/15ns – Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Inputs and outputs are LVTTL-compatible 文件：192.06 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
71V124SA15TYGI8	文件：192.06 Kbytes Page：9 Pages	3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise ◆ Equal access and cycle times – Commercial: 10/12/15ns – Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Inputs and outputs are LVTTL-compatible 文件：192.06 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
71V124SA15YG	文件：192.06 Kbytes Page：9 Pages	3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise ◆ Equal access and cycle times – Commercial: 10/12/15ns – Industrial: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Inputs and outputs are LVTTL-compatible 文件：192.06 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS

详细参数

型号：
71V124SA
制造商：
Integrated Device Technology Inc
功能描述：
SRAM Chip Async Single 3.3V 1M-Bit 128K x 8 10ns 32-Pin TSOP-II Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
芯有半导体（深圳）有限公司	71V124SA12TY	IDT	00/01+	ZIP-32	56	全新原装100真实现货供应	询价
深圳市一线半导体有限公司	71V124SA10Y	IDT	24+	SOJ-7.2-32P	800		询价
深圳市利加科技有限公司	71V124SA12PHG8	IDT	16+	NA	8800	原装现货,货真价优	询价
上海鑫科润电子科技有限公司	71V124SA10PH	IDT	2005	SOP32	1264	原装现货海量库存欢迎咨询	询价
深圳市福田区绿盛电子商行	71V124SA12YG	IDT	2018+		26976	代理原装现货/特价热卖!	询价
深圳市昊创电子有限公司	71V124SA10TYG8	IDT	16+		7917	进口原装正品	询价
上海市鑫鸿达电子	71V124SA15TYG	Integrated Device Technology (	2022+		1	全新原装货期两周	询价
深圳市威尔健半导体有限公司	71V124SA10Y	MSTAR/晨星半导体	23+	QFP128	69820	终端可以免费供样,支持BOM配单!	询价
瀚佳科技(深圳)有限公司	71V124SA15TYGI	IDT, Integrated Device Technol	24+	32-SOJ	56200	一级代理/放心采购	询价
深圳市百诺芯科技有限公司	71V124SA10TYG8	IDT	23+	NA	7917	原装正品代理渠道价格优势	询价

更多71V124SA供应商更新时间2026-10-28 15:53:00

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