首页 >71V124SA12YG>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
71V124SA12YG | 3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | |
71V124SA12YG | 包装：托盘 封装/外壳：32-BSOJ（0.400"，10.16mm 宽） 类别：集成电路（IC） 存储器 描述：IC SRAM 1MBIT PARALLEL 32SOJ | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | |
3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
3.3V CMOS Static RAM1 Meg (128K x 8-Bit) Center Power & Ground Pinout Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
包装：管件 封装/外壳：32-BSOJ（0.400"，10.16mm 宽） 类别：集成电路（IC） 存储器 描述：IC SRAM 1MBIT PARALLEL 32SOJ | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
包装：托盘 封装/外壳：32-BSOJ（0.400"，10.16mm 宽） 类别：集成电路（IC） 存储器 描述：IC SRAM 1MBIT PARALLEL 32SOJ | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT |
产品属性
- 产品编号：
71V124SA12YG
- 制造商：
Renesas Electronics America Inc
- 类别：
集成电路（IC） > 存储器
- 包装：
托盘
- 存储器类型：
易失
- 存储器格式：
SRAM
- 技术：
SRAM - 异步
- 存储容量：
1Mb（128K x 8）
- 存储器接口：
并联
- 写周期时间 - 字，页：
12ns
- 电压 - 供电：
3V ~ 3.6V
- 工作温度：
0°C ~ 70°C（TA）
- 安装类型：
表面贴装型
- 封装/外壳：
32-BSOJ（0.400"，10.16mm 宽）
- 供应商器件封装：
32-SOJ
- 描述：
IC SRAM 1MBIT PARALLEL 32SOJ
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IDT |
2018+ |
26976 |
代理原装现货/特价热卖! |
询价 | |||
Integrated Device Technology ( |
2022+ |
1 |
全新原装 货期两周 |
询价 | |||
IDT, Integrated Device Technol |
21+ |
32-SOJ |
56200 |
一级代理/放心采购 |
询价 | ||
RENESAS(瑞萨)/IDT |
1921+ |
SOJ-32 |
3575 |
向鸿仓库现货,优势绝对的原装! |
询价 | ||
IDT |
1931+ |
N/A |
745 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 | ||
RENESAS(瑞萨)/IDT |
2117+ |
SOJ-32 |
315000 |
23个/管一级代理专营品牌!原装正品,优势现货,长期 |
询价 | ||
IDT |
21+ |
32-BSOJ |
460 |
原装现货假一赔十 |
询价 | ||
IDT |
20+ |
SOP-32 |
4854 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
Renesas |
21+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
询价 | |||
IDT |
22+ |
ORIGINAL |
25800 |
原装正品,品质保证,值得你信赖. |
询价 |
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