71124说明书PDF资料供应商报价瑞萨RENESAS-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
71124	文件：188.35 Kbytes Page：9 Pages	CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise. ◆ Equal access and cycle times – Commercial: 12/15/20ns – Industrial: 15/20ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional inputs and outputs directly 文件：188.35 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
71124	文件：300 bytes Page：1 Pages	5.0V 128K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout The 71124 5V CMOS SRAM is organized as 128K x 8. The JEDEC centerpower/GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71124 are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used; no c JEDEC revolutionary pinout (center power/GND) forreduced noise.\nEqual access and cycle times– Commercial and Industrial: 12/15/20ns\nOne Chip Select plus one Output Enable pin\nBidirectional inputs and outputs directly TTL-compatible\nLow power consumption via chip deselect\nAvailable in a 32-pin 4;	Renesas 瑞萨	Renesas
71124S12YG	文件：188.35 Kbytes Page：9 Pages	CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise. ◆ Equal access and cycle times – Commercial: 12/15/20ns – Industrial: 15/20ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional inputs and outputs directly 文件：188.35 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
71124S12YG8	文件：188.35 Kbytes Page：9 Pages	CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise. ◆ Equal access and cycle times – Commercial: 12/15/20ns – Industrial: 15/20ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional inputs and outputs directly 文件：188.35 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
71124S15YG	文件：188.35 Kbytes Page：9 Pages	CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise. ◆ Equal access and cycle times – Commercial: 12/15/20ns – Industrial: 15/20ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional inputs and outputs directly 文件：188.35 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
71124S15YG8	文件：188.35 Kbytes Page：9 Pages	CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise. ◆ Equal access and cycle times – Commercial: 12/15/20ns – Industrial: 15/20ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional inputs and outputs directly 文件：188.35 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
71124S15YGI	文件：188.35 Kbytes Page：9 Pages	CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise. ◆ Equal access and cycle times – Commercial: 12/15/20ns – Industrial: 15/20ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional inputs and outputs directly 文件：188.35 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
71124S15YGI8	文件：188.35 Kbytes Page：9 Pages	CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise. ◆ Equal access and cycle times – Commercial: 12/15/20ns – Industrial: 15/20ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional inputs and outputs directly 文件：188.35 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
71124S20YG	文件：188.35 Kbytes Page：9 Pages	CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise. ◆ Equal access and cycle times – Commercial: 12/15/20ns – Industrial: 15/20ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional inputs and outputs directly 文件：188.35 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
71124S20YG8	文件：188.35 Kbytes Page：9 Pages	CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout Features ◆ 128K x 8 advanced high-speed CMOS static RAM ◆ JEDEC revolutionary pinout (center power/GND) for reduced noise. ◆ Equal access and cycle times – Commercial: 12/15/20ns – Industrial: 15/20ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional inputs and outputs directly 文件：188.35 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS

技术参数

Density (Kb)：
1024
Bus Width (bits)：
8
Core Voltage (V)：
5
Pkg. Type：
SOJ
Organization：
128K x 8
I/O Voltage (V)：
5
Access Time (ns)：
12
Temp. Range：
-40 to 85°C
Architecture：
Asynchronous

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市一线半导体有限公司	71124S15Y	IDT	24+	SOJ	100		询价
上海专毅电子科技有限公司	71124S15Y	IDT	17+	SOJ	9800	只做全新进口原装,现货库存	询价
上海鑫科润电子科技有限公司	71124S15Y	IDT	1999	SOJ	100	原装现货海量库存欢迎咨询	询价
上海意淼电子科技有限公司	71124S15Y	TI	26+	DIP	80000	全新原装假一赔十	询价
深圳市振宏微科技有限公司	71124S20YGI	IDT	25+	NA	10826	专做原装正品,假一罚百!	询价
深圳市福田区绿盛电子商行	71124S15YG	IDT	2018+		26976	代理原装现货/特价热卖!	询价
上海市鑫鸿达电子	71124S15YG	Integrated Device Technology (	2022+		1	全新原装货期两周	询价
瀚佳科技(深圳)有限公司	71124S20YGI	IDT, Integrated Device Technol	24+	32-SOJ	56200	一级代理/放心采购	询价
深圳市艾宇欣科技有限公司	71124S15YGI	IDT	1931+	N/A	1186	加我qq或微信，了解更多详细信息,体验一站式购物	询价
艾睿（深圳）半导体有限公司	71124S12YG8	RENESAS(瑞萨)/IDT	2447	SOJ-32	315000	1000个/圆盘一级代理专营品牌!原装正品,优势现货,	询价

更多71124供应商更新时间2026-10-23 16:30:00

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